DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D050
BA423A
AM band-switching diode
Product specification
Supersedes data of March 1982
1996 Mar 13
Philips Semiconductors
Product specification
AM band-switching diode
FEATURES
•
Continuous reverse voltage:
max. 20 V
•
Continuous forward current:
max. 50 mA
•
Low diode capacitance:
max. 2.5 pF
•
Low diode forward resistance:
max. 1.2
Ω.
APPLICATION
•
Band switching in AM radio
receivers.
The diodes are type branded.
BA423A
DESCRIPTION
Planar band-switching diode in a hermetically sealed glass SOD68
(DO-34) package.
k
handbook, halfpage
a
MAM156
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
PARAMETER
MIN.
−
−
−65
−
MAX.
20
50
+150
150
V
mA
°C
°C
UNIT
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
see Fig.3
V
R
= 20V
V
R
= 20 V; T
j
= 125
°C
C
d
r
D
diode capacitance
diode forward resistance
f = 1 MHz; V
R
= 3 V; see Fig.4
I
F
= 10 mA; f = 1 MHz; see Fig.5
100
5
2.5
1.2
nA
µA
pF
Ω
CONDITIONS
I
F
= 50 mA; see Fig.2
MAX.
0.9
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a FR4 printed-circuit board without metallization pad.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 10 mm
lead length 10 mm; note 1
VALUE
240
500
UNIT
K/W
K/W
1996 Mar 13
2
Philips Semiconductors
Product specification
AM band-switching diode
GRAPHICAL DATA
MBG292
BA423A
handbook, halfpage
(1)
(2)
(3)
100
10
4
handbook, halfpage
IR
(nA)
10
3
MBG291
IF
(mA)
50
10
2
10
0
0
0.5
1
V F (V)
1.5
1
0
50
100
Tj ( o C)
150
(1) T
j
= 125
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
V
R
= 20 V.
Solid line: maximum values.
Dotted line: typical values.
Fig.2
Forward current as a function of
forward voltage.
Fig.3
Reverse current as a function of
junction temperature.
handbook, halfpage
4
MBG293
handbook, halfpage
4
MBG294
Cd
(pF)
3
rD
(Ω)
3
2
2
1
1
0
0
4
8
12 V (V) 16
R
0
0
4
8
12 I (mA) 16
F
f = 1 MHz; T
j
= 25
°C.
f = 1 MHz; T
j
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
Fig.5
Diode forward resistance as a function of
forward current; typical values.
1996 Mar 13
3
Philips Semiconductors
Product specification
AM band-switching diode
PACKAGE OUTLINE
BA423A
handbook, full pagewidth
0.55
max
1.6
max
25.4 min
3.04
max
25.4 min
MSA212 - 1
Dimensions in mm.
The marking band indicates the cathode.
Fig.6 SOD68; DO-34.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
1996 Mar 13
4
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