CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C075A3
Issued Date : 2016.02.02
Revised Date :
Page No. : 1/10
MTN1N60BA3
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Fast Switching Characteristic
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
R
DS(ON)
@V
GS
=10V, I
D
=0.5A
600V
0.8A
7.8Ω(typ)
Applications
•
Adapter
•
Switching Mode Power Supply
Symbol
MTN1N60BA3
Outline
TO-92
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
MTN1N60BA3-0-TB-G
MTN1N60BA3-0-BK-G
Package
TO-92
(Pb-free lead plating and halogen-free package)
TO-92
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / Tape & Box
1000 pcs/ bag, 10 bags/box,
10boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
MTN1N60BA3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Spec. No. : C075A3
Issued Date : 2016.02.02
Revised Date :
Page No. : 2/10
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=10V, T
C
=25°C
Continuous Drain Current @V
GS
=10V, T
C
=100°C
Pulsed Drain Current @ V
GS
=10V
(Note 1)
Single Pulse Avalanche Current
(Note 2)
Single Pulse Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (T
A
=25℃)
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
E
AR
T
L
P
D
Tj, Tstg
600
±30
0.8*
0.5*
3.2*
1
5
0.5
300
1
5
0.04
-55~+150
V
A
mJ
°C
W
W
W/°C
°C
Note : 1
.
Repetitive rating; pulse width limited by maximum junction temperature.
2
.
I
AS
=1A, V
DD
=50V, L=10mH, R
G
=25
Ω
, starting T
J
=+25
℃
. Guaranteed by design, not by 100% test.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
θJC
R
θJA
Value
25
125
Unit
°C/W
MTN1N60BA3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
600
-
2.0
-
-
-
-
-
-
0.6
-
1
-
-
-
7.8
5
2.4
0.9
5.6
7.8
11.6
12.6
135
24.3
10.7
-
-
0.95
190
340
-
-
4.0
-
±
100
1
10
9.8
V
V/°C
V
S
nA
μA
Ω
Min.
Typ.
Max.
Unit
Test Conditions
Spec. No. : C075A3
Issued Date : 2016.02.02
Revised Date :
Page No. : 3/10
*R
DS(ON)
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
V
GS
=0V, I
D
=250μA, Tj=25
℃
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=15V, I
D
=0.5A
V
GS
=
±
30V
V
DS
=600V, V
GS
=0V
V
DS
=480V, V
GS
=0V, Tj=125
°
C
V
GS
=10V, I
D
=0.5A
nC
V
DS
=480V, I
D
=1A,V
GS
=10V
V
DS
=300V, I
D
=1A, V
GS
=10V,
R
G
=25
Ω
ns
-
-
-
0.8
3.2
1.5
-
-
pF
V
GS
=0V, V
DS
=25V, f=1MHz
A
V
ns
nC
I
S
=1A, V
GS
=0V
V
GS
=0V, I
F
=1A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTN1N60BA3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
2.5
2
1.5
1
0.5
0
0
10
20
30
40
V
DS
, Drain-Source Voltage(V)
50
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
1.4
Spec. No. : C075A3
Issued Date : 2016.02.02
Revised Date :
Page No. : 4/10
Brekdown Voltage vs Ambient Temperature
I
D
, Drain Current (A)
10V
9V
8V
7V
1.2
6V
1
5.5V
V
GS
=4.5V
0.8
5V
0.6
-75
-50
-25
0
25
50
75
I
D
=250μA,
V
GS
=0V
100 125 150 175
Tj, Ambient Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Drain Current vs Gate-Source Voltage
2.5
V
DS
=30V
15
14
Static Drain-Source On-State
Resistance-R
DS(on)
(Ω)
13
12
11
10
9
8
7
6
5
0.01
0.1
1
Drain Current-I
D
(A)
10
V
GS
=10V
Ta=25°C
2
I
D
, Drain Current(A)
1.5
V
DS
=10V
1
0.5
0
0
2
4
6
V
GS
, Gate-Source Voltage(V)
8
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
14
R
DS(ON)
, Static Drain-Source On-State
Resistance(Ω)
12
10
8
6
4
I
D
=0.5A
2
0
0
2
4
6
V
GS
, Gate-Source Voltage(V)
8
10
Ta=25°C
Forward Drain Current vs Source-Drain Voltage
1
V
GS
=0V
I
F
, Forward Current(A)
0.1
Ta=150°C
0.01
Ta=25°C
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, Source Drain Voltage(V)
MTN1N60BA3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
1000
R
DS(ON)
, Normalized Static Drain-Source
On-state Resistance
Ciss
Capacitance(pF)
100
Coss
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
5
10
15
20
V
DS
, Drain-to-Source Voltage(V)
25
30
-75
-50
-25
Spec. No. : C075A3
Issued Date : 2016.02.02
Revised Date :
Page No. : 5/10
Static Drain-Source On-resistance vs Ambient Temperature
10
Crss
f=1MHz
1
I
D
=0.5A,
V
GS
=10V
0
25 50 75 100 125 150 175
T
A
,
Ambient Temperature(°C)
Maximum Safe Operating Area
10
R
DS(ON)
Limited
100
μs
1ms
10ms
10
μs
Gate Charge Characteristics
10
V
DS
=120V
V
DS
=300V
I
D
, Drain Current(A)
1
V
GS
, Gate-Source Voltage(V)
8
6
4
V
DS
=480V
0.1
100ms
DC
0.01
T
C
=25°C, Tj(max)=150°C
V
GS
=10V, R
θJC
=25°C/W
Single pulse
1
10
100
2
I
D
=1A
0
0.001
1000
0
1
2
3
4
5
6
V
DS
, Drain-Source Voltage(V)
Maximum Drain Current vs Case Temperature
1
V
GS(th)
, Normalized Threshold Voltage
1.4
1.2
Qg, Total Gate Charge(nC)
Threshold Voltage vs Junction Tempearture
I
D
, Maximum Drain Current(A)
0.8
0.6
0.4
0.2
V
GS
=10V, R
θJC
=25°C/W
I
D
=1mA
1
0.8
0.6
0.4
0.2
I
D
=250
μA
0
25
50
75
100
125
150
175
T
C
, Case Temperature(°C)
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN1N60BA3
CYStek Product Specification
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