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HN4D01JU_14

Description
Ultra High Speed Switching Applications
File Size212KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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HN4D01JU_14 Overview

Ultra High Speed Switching Applications

HN4D01JU
TOSHIBA Diode
Silicon Epitaxial Planar Type
HN4D01JU
Ultra High Speed Switching Applications
Low forward voltage
: V
F (3)
= 0.92V (typ.)
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
Small total capacitance
: C
T
= 2.2pF (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
85
80
300*
100*
2*
200**
150
−55
to 150
Unit
V
V
mA
mA
A
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
*: Unit rating. Total rating = unit rating × 1.5
** :Total rating
JEDEC
EIAJ
TOSHIBA
Weight: 0.0062 g (typ.)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
Reverse recovery time
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
Test Condition
I
F
= 1mA
I
F
= 10mA
I
F
= 100mA
V
R
= 30V
V
R
= 80V
V
R
= 0, f = 1MHz
I
F
= 10mA, Fig.1
Min
Typ.
0.61
0.74
0.92
Max
Unit
1.20
0.1
0.5
V
2.2
1.6
μA
pF
ns
Fig.1 Reverse Recovery Time (t
rr
) Test Circuit
Start of commercial production
1
2001-03
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