PSM44028L45TCM datasheet, PDF - EEWORLD Datasheet

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PSM44028L45TCM: DescriptionStandard SRAM, 256KX4, 45ns, CMOS, CDIP28; Categorystorage storage; File Size241KB，11 Pages; ManufacturerParadigm Technology Inc

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PSM44028L45TCM Overview

Standard SRAM, 256KX4, 45ns, CMOS, CDIP28

PSM44028L45TCM Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Paradigm Technology Inc
package instruction	DIP, DIP28,.4
Reach Compliance Code	unknow
Maximum access time	45 ns
I/O type	COMMON
JESD-30 code	R-XDIP-T28
JESD-609 code	e0
memory density	1048576 bi
Memory IC Type	STANDARD SRAM
memory width	4
Number of terminals	28
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	256KX4
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.4
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.0005 A
Minimum standby current	2 V
Maximum slew rate	0.16 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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PSM44028L45TCM Related Products

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Description	Standard SRAM, 256KX4, 45ns, CMOS, CDIP28	Standard SRAM, 256KX4, 35ns, CMOS, PDSO28	Standard SRAM, 256KX4, 20ns, CMOS, CDIP28	Standard SRAM, 256KX4, 45ns, CMOS, CDIP28	Standard SRAM, 256KX4, 20ns, CMOS, CDIP28	Standard SRAM, 256KX4, 20ns, CMOS, PDSO28	Standard SRAM, 256KX4, 25ns, CMOS, CDIP28	Standard SRAM, 256KX4, 45ns, CMOS, CDIP28	Standard SRAM, 256KX4, 25ns, CMOS, CDIP28
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	DIP, DIP28,.4	SOJ, SOJ28,.34	DIP, DIP28,.4	DIP, DIP28,.4	DIP, DIP28,.4	SOJ, SOJ28,.34	DIP, DIP28,.4	DIP, DIP28,.4	DIP, DIP28,.4
Reach Compliance Code	unknow	unknown	unknow	unknow	unknow	unknow	unknown	unknown	unknown
Maximum access time	45 ns	35 ns	20 ns	45 ns	20 ns	20 ns	25 ns	45 ns	25 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDIP-T28	R-PDSO-J28	R-XDIP-T28	R-XDIP-T28	R-XDIP-T28	R-PDSO-J28	R-XDIP-T28	R-XDIP-T28	R-XDIP-T28
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	1048576 bi	1048576 bit	1048576 bi	1048576 bi	1048576 bi	1048576 bi	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	4	4	4	4	4	4	4	4	4
Number of terminals	28	28	28	28	28	28	28	28	28
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	70 °C	125 °C	125 °C	125 °C	70 °C	125 °C	125 °C	70 °C
Minimum operating temperature	-55 °C	-	-55 °C	-55 °C	-55 °C	-	-55 °C	-55 °C	-
organize	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	PLASTIC/EPOXY	CERAMIC	CERAMIC	CERAMIC	PLASTIC/EPOXY	CERAMIC	CERAMIC	CERAMIC
encapsulated code	DIP	SOJ	DIP	DIP	DIP	SOJ	DIP	DIP	DIP
Encapsulate equivalent code	DIP28,.4	SOJ28,.34	DIP28,.4	DIP28,.4	DIP28,.4	SOJ28,.34	DIP28,.4	DIP28,.4	DIP28,.4
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.0005 A	0.0005 A	0.0005 A	0.0005 A	0.0005 A	0.0005 A	0.01 A	0.01 A	0.0005 A
Minimum standby current	2 V	2 V	2 V	2 V	2 V	2 V	4.5 V	4.5 V	2 V
Maximum slew rate	0.16 mA	0.15 mA	0.18 mA	0.16 mA	0.18 mA	0.17 mA	0.17 mA	0.16 mA	0.16 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	YES	NO	NO	NO	YES	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	COMMERCIAL	MILITARY	MILITARY	MILITARY	COMMERCIAL	MILITARY	MILITARY	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	J BEND	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	J BEND	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	1.27 mm	2.54 mm	2.54 mm	2.54 mm	1.27 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	-	-	-
ECCN code	-	-	-	-	3A001.A.2.C	3A991.B.2.B	3A001.A.2.C	3A001.A.2.C	EAR99

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