PSM44028L25TC datasheet, PDF - EEWORLD Datasheet

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PSM44028L25TC: DescriptionStandard SRAM, 256KX4, 25ns, CMOS, CDIP28; Categorystorage storage; File Size241KB，11 Pages; ManufacturerParadigm Technology Inc

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PSM44028L25TC Overview

Standard SRAM, 256KX4, 25ns, CMOS, CDIP28

PSM44028L25TC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	101190442
package instruction	DIP, DIP28,.4
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	25 ns
I/O type	COMMON
JESD-30 code	R-XDIP-T28
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of terminals	28
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX4
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.4
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.0005 A
Minimum standby current	2 V
Maximum slew rate	0.16 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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PSM44028L25TC Related Products

	PSM44028L25TC	PSM44028L35TSO	PSM44028L20TCM	PSM44028L45TCB	PSM44028L45TCM	PSM44028L20TCB	PSM44028L20TSO	PSM44028S25TCB	PSM44028S45TCB
Description	Standard SRAM, 256KX4, 25ns, CMOS, CDIP28	Standard SRAM, 256KX4, 35ns, CMOS, PDSO28	Standard SRAM, 256KX4, 20ns, CMOS, CDIP28	Standard SRAM, 256KX4, 45ns, CMOS, CDIP28	Standard SRAM, 256KX4, 45ns, CMOS, CDIP28	Standard SRAM, 256KX4, 20ns, CMOS, CDIP28	Standard SRAM, 256KX4, 20ns, CMOS, PDSO28	Standard SRAM, 256KX4, 25ns, CMOS, CDIP28	Standard SRAM, 256KX4, 45ns, CMOS, CDIP28
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	DIP, DIP28,.4	SOJ, SOJ28,.34	DIP, DIP28,.4	DIP, DIP28,.4	DIP, DIP28,.4	DIP, DIP28,.4	SOJ, SOJ28,.34	DIP, DIP28,.4	DIP, DIP28,.4
Reach Compliance Code	unknown	unknown	unknow	unknow	unknow	unknow	unknow	unknown	unknown
Maximum access time	25 ns	35 ns	20 ns	45 ns	45 ns	20 ns	20 ns	25 ns	45 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDIP-T28	R-PDSO-J28	R-XDIP-T28	R-XDIP-T28	R-XDIP-T28	R-XDIP-T28	R-PDSO-J28	R-XDIP-T28	R-XDIP-T28
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	1048576 bit	1048576 bit	1048576 bi	1048576 bi	1048576 bi	1048576 bi	1048576 bi	1048576 bit	1048576 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	4	4	4	4	4	4	4	4	4
Number of terminals	28	28	28	28	28	28	28	28	28
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	125 °C	125 °C	125 °C	125 °C	70 °C	125 °C	125 °C
Minimum operating temperature	-	-	-55 °C	-55 °C	-55 °C	-55 °C	-	-55 °C	-55 °C
organize	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	PLASTIC/EPOXY	CERAMIC	CERAMIC	CERAMIC	CERAMIC	PLASTIC/EPOXY	CERAMIC	CERAMIC
encapsulated code	DIP	SOJ	DIP	DIP	DIP	DIP	SOJ	DIP	DIP
Encapsulate equivalent code	DIP28,.4	SOJ28,.34	DIP28,.4	DIP28,.4	DIP28,.4	DIP28,.4	SOJ28,.34	DIP28,.4	DIP28,.4
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.0005 A	0.0005 A	0.0005 A	0.0005 A	0.0005 A	0.0005 A	0.0005 A	0.01 A	0.01 A
Minimum standby current	2 V	2 V	2 V	2 V	2 V	2 V	2 V	4.5 V	4.5 V
Maximum slew rate	0.16 mA	0.15 mA	0.18 mA	0.16 mA	0.16 mA	0.18 mA	0.17 mA	0.17 mA	0.16 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	YES	NO	NO	NO	NO	YES	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	MILITARY	MILITARY	MILITARY	MILITARY	COMMERCIAL	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	J BEND	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	J BEND	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	1.27 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	1.27 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
ECCN code	EAR99	-	-	-	-	3A001.A.2.C	3A991.B.2.B	3A001.A.2.C	3A001.A.2.C
Maker	-	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	-	-

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