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BD376

Description
Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size39KB,1 Pages
ManufacturerCrimson Semiconductor Inc.
Download Datasheet Parametric View All

BD376 Overview

Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin,

BD376 Parametric

Parameter NameAttribute value
MakerCrimson Semiconductor Inc.
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Other featuresLOW LEAKAGE
Maximum collector current (IC)2 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment25 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
VCEsat-Max1 V
This Material Copyrighted By Its Respective Manufacturer
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