QP7C291A / QP7C292A
October 9, 2007
2K x 8 Reprogrammable PROM
Features
• 5V ±10% VCC, commercial, industrial and military
• Windowed Packages available for reprogrammability
• OTP (One-Time-Programmable) Packages available
• High speed
- 20 ns (commercial)
- 25 ns (military)
• CMOS for optimum speed/power
• Slim 300-mil or standard 600-mil packaging available
• Direct replacement for Cypress PROMs
• Direct replacement for bipolar PROMs
• EPROM technology 100% programmable
• Low power
- 660 mW (commercial and military)
• Low standby power
- 220 mW (commercial and military)
• TTL-compatible I/O
General Description
The QP7C291A, and QP7C292A are high-performance 2K-word by 8-bit CMOS PROMs. They are functionally
identical, but are packaged in 300-mil (QP7C291A) and 600-mil wide plastic and hermetic DIP packages
(QP7C292A). The QP7C291A is also available in LCC/PLCC packages.
The devices are available in windowed packages (Erasable when exposed to UV light) and can be
reprogrammed. They are also available in non-windowed OTP (One-Time-Programmable) hermetic and plastic
packages.
The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming
algorithms.
The QP7C291A, and QP7C292A, are plug-in replacements for Cypress PROMs. They are also designed to be
plug-in replacements for bipolar devices and offer the advantages of lower power, re-programmability, superior
performance and programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current
requirements allow for gang programming. The EPROM cells allow for each memory location to be tested
100%, as each location is written into, erased, and exercised prior to packaging. Each PROM is tested for AC
performance to guarantee that after customer programming the product will meet DC and AC specification
limits.
A read is accomplished by placing an active LOW signal on CS1, and active HIGH signals on CS2 and CS3. The
contents of the memory location addressed by the address line (A0
−
A10 will become available on the output
lines (O0
−
O7).
QP Semiconductor products are not authorized for use in any space applications. The inclusion of QP Semiconductor
products in space applications implies that the space application manufacturer assumes all risk of such use and in doing
so indemnifies QP Semiconductor against all charges.
2945 Oakmead Village Ct, Santa Clara, CA 95051
•
Phone:
(408) 737-0992
•
Fax:
(408) 736—8708
•
Internet:
www.qpsemi.com
QP7C291A / QP7C292A
Connection Diagrams
CerDIP/PDIP/Cerpack 24 Lead
QP7C291A
QP7C292A
Hermetic Packages available in both
Erasable (Windowed and OTP –
One-Time-Programmable (Non-
Windowed versions.
Molded Plastic Packages
(PDIP/PLCC are only available as
OTP (Non-Windowed.
LCC/PLCC
Block Diagram
QP7C291A
QP7C292A
Absolute Maximum Ratings
Stresses above the AMR may cause permanent damage, extended operation at AMR may degrade performance and affect reliability
Condition
Supply Voltage to Ground
DC Voltage Applied to Outputs in High Z
State
DC Input Voltage
DC Program Voltage
UV Exposure
Units
-0.5 to 7.0 Volts
-0.5 to 7.0 Volts
-3.0V to 7.0 Volts
13.0 Volts
7258 W
SEC
/cm
2
Notes
QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051
Page 2 of 8
QP7C291A / QP7C292A
Storage Temperature
Ambient Temperature with Power Applied
Junction Temperature
Recommended Operating Conditions
Condition
Supply Voltage Range
Case Operating Range (T
c
)
Case Operating Range (T
c
)
Case Operating Range (T
c
)
Notes:
Apply to Absolute Maximum, Recommended Operating Conditions and Electrical Performance Characteristics.
-65 to +155 ºC
-55 to +125 ºC
150 ºC
/1 /2
Units
4.5 to 5.5
-0C to +70
-40C to +85
-55 to +125
Volts DC
ºC
ºC
ºC
Notes
5V ± 10%
Commercial
Industrial
Military
/1 – Applies to all versions, but is critical for molded plastic products. Tj above listed limits can activate
mold compound flame retardant.
/2 – Maximum T
J
is not to be exceeded.
/3 – V
CC
4.5 to 5.5 Volts
/4 – For Test Purposes, not more than one output at a time should be shorted. Short circuit test duration
should not exceed 30 seconds.
TABLE I – ELECTRICAL PERFORMANCE CHARACTERISTICS
Test
Symbol
Conditions /3
Case Operating Range (ºC)
Min
Max
Unit
Output Voltage High
Output Voltage Low
Input High Voltage
Input Low Voltage
Input Load Current
Output Leakage Current
Output Short Circuit Current
/4
Operating Supply Current
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
OS
I
CC
V
CC
= 4.5V, I
OH
=-4.0mA
V
CC
= 4.5V, I
OL
=16.0mA
Guaranteed Input logical
High for all inputs
Guaranteed Input logical
Low for all inputs
2.4
0.4
2.0
V
CC
0.8
-10
-10
-20
10
10
-90
120
90
90
90
120
90
90
12
13
V
V
V
V
μA
μA
mA
mA
mA
mA
mA
mA
mA
mA
V
GND≤V
IN
≤V
CC
Output Disabled
GND≤V
OUT
≤V
CC
,
V
CC
= 5.5V, V
OUT
=GND
V
CC
= 5.5V, I
OUT
=0 mA
20ns Commercial
25ns Commercial
35ns Commercial
50ns Commercial
25ns Military
35ns Military
50ns Military
Programming Supply Voltage
V
PP
QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051
Page 3 of 8
QP7C291A / QP7C292A
TABLE I – ELECTRICAL PERFORMANCE CHARACTERISTICS
Test
Symbol
Conditions /3
Case Operating Range (ºC)
Min
Max
Unit
Programming Supply Current
Input High Programming Voltage
Input Low Programming Voltage
Input Capacitance
Output Capacitance
Address to Output Valid
I
PP
V
IHP
V
ILP
C
IN
C
OUT
t
AA
T
A
=25ºC, f=1MHz,
V
CC
=5.0V
T
A
=25ºC, f=1MHz,
V
CC
=5.0V
QP7C291(292)A-20
QP7C291(292)A-25
QP7C291(292)A-35
QP7C291(292)A-50
3.0
50
0.4
10
10
20
25
35
50
15
15
20
20
15
15
20
20
MA
V
V
pF
pF
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
Chip Select Inactive to High Z
T
HZCS1
QP7C291(292)A-20
QP7C291(292)A-25
QP7C291(292)A-35
QP7C291(292)A-50
Chip Select Active to Output
T
ACS1
QP7C291(292)A-20
QP7C291(292)A-25
QP7C291(292)A-35
QP7C291(292)A-50
AC Test Loads
QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051
Page 4 of 8
QP7C291A / QP7C292A
Waveforms
Mode
Read
Output Disable
Output Disable
Output Disable
Program
Program Verify
Program Inhibit
Intelligent Program
Blank Check Zeros
/5 –
/6 –
A
10
-A
0
/5
Address
Address
Address
Address
Address
Address
Address
Address
Address
CS
3
/PGM
V
IH
X
/6
X
/6
V
IL
V
ILP
V
IHP
V
IHP
V
ILP
V
IHP
Pin Function
CS
2
/VFY
CS
1BAR
/V
PP
V
IH
V
IL
X
/6
V
IH
V
IL
X
/6
X
/6
X
/6
V
IHP
V
PP
V
ILP
V
PP
V
IHP
V
PP
V
IHP
V
PP
V
ILP
V
PP
O
7
-O
0
Output Data
High Z
High Z
High Z
Data In
Output Data
High Z
Data In
Zeros Out
Normal V
IH
/V
IL
Levels representing Address Desired
X = “Don’t Care”, but not to exceed V
CC
+5%
Erasure Characteristics:
Wavelengths of light less than 4000 Angstroms begin to erase these PROMs. For this reason, an
opaque label should be placed over the window if the PROM is exposed to sunlight or fluorescent
lighting for extended periods of time.
The recommended dose of ultraviolet light for erasure is a wavelength of 2537 Angstroms for a
minimum dose (UV intensity x exposure time of 25 Wsec/cm2. For an ultraviolet lamp with a 12
mW/cm2 power rating, the exposure time would be approximately 35 minutes. These PROMs need to
be within 1 inch of the lamp during erasure. Permanent damage may result if the PROM is exposed to
high-intensity UV light for an extended period of time.
7258 Wsec/cm2 is the recommended maximum dosage.
Programming Information:
The QP7C291A and QP7C292A program using the same programming algorithm as Cypress 7C291A
and 7C292A devices. A variety of programming equipment currently supports the Cypress
Algorithm. QP Semiconductor has verified that the devices program on Data I/O Unisite and on a
programmer supplied by EETools.
QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051
Page 5 of 8
京公网安备 11010802033920号
EEWORLD
