TC59LM814CFT datasheet, PDF - EEWORLD Datasheet

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TC59LM814CFT: Description4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM; File Size2MB，38 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TC59LM814CFT Overview

4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM

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TC59LM814/06CFT-50,-55,-60

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

4,194,304-WORDS

4 BANKS

16-BITS Network FCRAM

8,388,608-WORDS

4 BANKS

8-BITS Network FCRAM

DESCRIPTION

Network FCRAM

is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network

FCRAM

containing 268,435,456 memory cells. TC59LM814CFT is organized as 4,194,304-words

4 banks s× 16

bits, TC59LM806CFT is organized as 8,388,608 words

4 banks

8 bits. TC59LM814/06CFT feature a fully

synchronous operation referenced to clock edge whereby all operations are synchronized at a clock input which

enables high performance and simple user interface coexistence. TC59LM814/06CFT can operate fast core cycle

using the FCRAM

core architecture compared with regular DDR SDRAM.

TC59LM814/06CFT is suitable for Network, Server and other applications where large memory density and low

power consumption are required. The Output Driver for Network FCRAM

is capable of high quality fast data

transfer under light loading condition.

FEATURES

PARAMETER

Random Read/Write Cycle Time (min)

RAC

Random Access Time (max)

DD1S

Operating Current (single bank) (max)

DD2P

Power Down Current (max)

DD6

Self-Refresh Current (max)

Clock Cycle Time (min)

-50

5.5 ns

5 ns

25 ns

22 ns

190 mA

2 mA

3 mA

TC59LM814/06

-55

6 ns

5.5 ns

27.5 ns

24 ns

180 mA

2 mA

3 mA

-60

6.5 ns

6 ns

30 ns

26 ns

170 mA

2 mA

3 mA

•

Fully Synchronous Operation

•

Double Data Rate (DDR)

Data input/output are synchronized with both edges of DQS.

•

Differential Clock (CLK and CLK ) inputs

CS , FN and all address input signals are sampled on the positive edge of CLK.

Output data (DQs and DQS) is aligned to the crossings of CLK and CLK .

Fast clock cycle time of 5 ns minimum

Clock: 200 MHz maximum

Data: 400 Mbps/pin maximum

Quad Independent Banks operation

Fast cycle and Short Latency

Bidirectional Data Strobe Signal

Distributed Auto-Refresh cycle in 7.8

µs

Self-Refresh

Power Down Mode

Variable Write Length Control

Write Latency

CAS Latency-1

Programable CAS Latency and Burst Length

CAS Latency

3, 4

Burst Length

2, 4

Organization

TC59LM814CFT: 4,194,304 words

4 banks

16 bits

TC59LM806CFT: 8,388,608 words

4 banks

8 bits

Power Supply Voltage V

2.5 V

0.15 V

DDQ

: 2.5 V

0.15 V

2.5 V CMOS I/O comply with SSTL-2 (half strength driver)

Package:

400

875 mil, 66 pin TSOPII, 0.65 mm pin pitch (TSOPII66-P-400-0.65)

Notice: FCRAM is a trademark of Fujitsu Limited, Japan.

2002-08-19

1/38

TC59LM814CFT Related Products

	TC59LM814CFT	TC59LM806CFT-50	TC59LM806CFT-55	TC59LM814CFT-60	TC59LM814CFT-50	TC59LM806CFT-60	TC59LM814CFT-55
Description	4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM	4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM	4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM	4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM	4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM	4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM	4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
Is it Rohs certified?	-	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	-	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
package instruction	-	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46
Contacts	-	66	66	66	66	66	66
Reach Compliance Code	-	unknow	unknow	unknow	unknow	unknow	unknow
access mode	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	-	0.65 ns	0.75 ns	0.85 ns	0.65 ns	0.85 ns	0.75 ns
Other features	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	-	200 MHz	182 MHz	166 MHz	200 MHz	166 MHz	182 MHz
I/O type	-	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	-	2,4	2,4	2,4	2,4	2,4	2,4
JESD-30 code	-	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66
JESD-609 code	-	e0	e0	e0	e0	e0	e0
length	-	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm
memory density	-	268435456 bi	268435456 bi	268435456 bi	268435456 bi	268435456 bi	268435456 bi
Memory IC Type	-	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	-	8	8	16	16	8	16
Number of functions	-	1	1	1	1	1	1
Number of ports	-	1	1	1	1	1	1
Number of terminals	-	66	66	66	66	66	66
word count	-	33554432 words	33554432 words	16777216 words	16777216 words	33554432 words	16777216 words
character code	-	32000000	32000000	16000000	16000000	32000000	16000000
Operating mode	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	-	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	-	32MX8	32MX8	16MX16	16MX16	32MX8	16MX16
Output characteristics	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	-	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
Encapsulate equivalent code	-	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
power supply	-	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	-	YES	YES	YES	YES	YES	YES
Continuous burst length	-	2,4	2,4	2,4	2,4	2,4	2,4
Maximum standby current	-	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
Maximum slew rate	-	0.19 mA	0.18 mA	0.17 mA	0.19 mA	0.17 mA	0.18 mA
Maximum supply voltage (Vsup)	-	2.65 V	2.65 V	2.65 V	2.65 V	2.65 V	2.65 V
Minimum supply voltage (Vsup)	-	2.35 V	2.35 V	2.35 V	2.35 V	2.35 V	2.35 V
Nominal supply voltage (Vsup)	-	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	-	YES	YES	YES	YES	YES	YES
technology	-	MOS	MOS	MOS	MOS	MOS	MOS
Temperature level	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	-	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm
Terminal location	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	-	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm
Maker	-	-	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor

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