www.fairchildsemi.com
KA5x0165Rxx-SERIES
KA5H0165R/RN, KA5M0165R/RN, KA5L0165R/RN,
KA5H0165RVN
Fairchild Power Switch(FPS)
Features
•
•
•
•
•
•
•
•
•
Precision Fixed Operating Frequency (100/67/50kHz )
Low Start-up Current (Typ. 100uA)
Pulse by Pulse Current Limiting
Over Load Protection
Over Voltage Protection (Min. 25V)
- except KA5H0165RVN
Internal Thermal Shutdown Function
Under Voltage Lockout
Internal High Voltage Sense FET
Auto-Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM IC. Included
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver, thermal shut down protection, over voltage
protection, and temperature compensated precision current
sources for loop compensation and fault protection circuitry
compared to discrete MOSFET and controller or R
CC
switching converter solution, The Fairchild Power Switch(FPS)
can reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system
reliability. It is well suited for cost effective design of flyback
converters.
TO-220F-4L
8-DIP
1
1
1. GND
2. Drain
3. Vcc
4. FB
1.6.7.8. Drain
2. GND
3. Vcc
4. FB
5. NC
Internal Block Diagram
V
CC
32V
5V
Vref
Good
logic
OSC
S
uA
Internal
bias
DRAIN
SFET
R
FB
5µA
−
1mA 2.5R
1R
9V
+
7.5V
−
+
27V
−
Thermal S/D
OVER VOLTAGE S/D
+
L.E.B
0.1V
Q
S
R
Q
GND
Power on reset
Rev.1.0.5
©2003 Fairchild Semiconductor Corporation
KA5X0165RXX-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
Drain-Gate Voltage (R
GS
=1MΩ)
Gate-Source (GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (T
C
=25°C)
Continuous Drain Current (T
C
=100°C)
Single Pulsed Avalanche Energy
(2)
Maximum Supply Voltage
Analog Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
Symbol
V
DGR
V
GS
I
DM
I
D
I
D
E
AS
V
CC,MAX
V
FB
P
D
Derating
T
J
T
A
T
STG
Value
650
±30
4.0
1.0
0.7
95
30
-0.3 to V
SD
40
0.32
+160
-25 to +85
-55 to +150
Unit
V
V
A
DC
A
DC
A
DC
mJ
V
V
W
W/°C
°C
°C
°C
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L=24mH, starting Tj=25°C
2
KA5X0165RXX-SERIES
Electrical Characteristics (SFET Part)
(Ta=25°C unless otherwise specified)
Parameter
D
rain-Source Breakdown Voltage
Z
ero Gate Voltage Drain Current
Static Drain-Source on Resistance
(Note)
Forward Transconductance
(Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Symbol
BV
DSS
I
DSS
R
DS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DD
=0.5B V
DSS
, I
D
=1.0A
(MOSFET switching time is
essentially independent of
operating temperature)
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5B V
DSS
(MOSFET
switching time is essentially
independent of operating
temperature)
V
GS
=0V, V
DS
=25V,
f=1MHz
Condition
V
GS
=0V, I
D
=50µA
V
DS
=Max. Rating, V
GS
=0V
V
DS
=0.8Max. Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=0.5A
V
DS
=50V, I
D
=0.5A
Min.
650
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
8
-
250
25
10
12
4
30
10
-
3
9
Max.
-
50
200
10
-
-
-
-
-
-
-
-
21
-
-
nC
nS
pF
Unit
V
µA
µA
Ω
S
Note:
1. Pulse test: Pulse width
≤
300µS, duty cycle
≤
2%
2.
1
S
= ---
-
R
3
KA5X0165RXX-SERIES
Electrical Characteristics (Control Part)
(Continued)
(Ta=25°C unless otherwise specified)
Parameter
UVLO SECTION
Start Threshold Voltage
Stop Threshold Voltage
OSCILLATOR SECTION
Initial Accuracy
Initial Accuracy
Initial Accuracy
Frequency Change With Temperature
(2)
Maximum Duty Cycle
Maximum Duty Cycle
FEEDBACK SECTION
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
REFERENCE SECTION
Output Voltage
(1)
Temperature Stability
(1)(2)
Peak Current Limit
PROTECTION SECTION
Thermal Shutdown Temperature
(1)
Over Voltage Protection
TOTAL STANDBY CURRENT SECTION
Start-up Current
Operating Supply Current
(Control Part Only)
I
START
I
OP
V
CC
=14V
V
CC
≤
28
-
-
100
7
170
12
µA
mA
T
SD
V
OVP
-
except
KA5H0165RVN
140
25
160
27
-
29
°C
V
Vref
Vref/∆T
I
OVER
Ta=25°C
-25°C
≤
Ta
≤
+85°C
Max. inductor current
4.80
-
0.53
5.00
0.3
0.6
5.20
0.6
0.67
V
mV/°C
A
I
FB
V
SD
Idelay
Ta=25°C, 0V
≤
Vfb
≤
3V
Vfb
≥
6.5V
Ta=25°C, 3V
≤
Vfb
≤
V
SD
0.7
6.9
4
0.9
7.5
5
1.1
8.1
6
mA
V
µA
F
OSC
F
OSC
F
OSC
∆F/∆T
Dmax
Dmax
KA5H0165Rxx
KA5M0165Rx
KA5L0165Rx
-25°C
≤
Ta
≤
+85°C
KA5H0165Rxx
KA5M0165Rx
KA5L0165Rx
90
61
45
-
62
72
100
67
50
±5
67
77
110
73
55
±10
72
82
kHz
kHz
kHz
%
%
%
V
START
V
STOP
V
FB
=GND
V
FB
=GND
14
8.2
15
8.8
16
9.4
V
V
Symbol
Condition
Min.
Typ.
Max.
Unit
CURRENT LIMIT(SELF-PROTECTION)SECTION
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4
KA5X0165RXX-SERIES
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta=25°C)
Fig.1 Operating Frequency
1.2
1.15
1.1
1.05
Fosc
1
0.95
0.9
0.85
0.8
-25
0
25
50
75
100 125 150
Fig.2 Feedback Source Current
1.2
1.15
1.1
1.05
Ifb
1
0.95
0.9
0.85
0.8
-25
0
25
50
75
100
125 150
Temperature [°C]
Figure 1. Operating Frequency
Temperature [°C]
Figure 2. Feedback Source Current
Fig.3 Operating Current
1.2
1.15
1.1
1.05
Iop
1
0.95
0.9
0.85
0.8
-25
1.1
1.05
Fig.4 Max Inductor Current
I
Ipeak
1
over
0.95
0.9
0.85
0
25
50
75
100 125 150
0.8
-25
0
25
50
75
100 125 150
Temperature [°C]
Figure 3. Operating Supply Current
Temperature [°C]
Figure 4. Peak Current Limit
1.5
1.3
Fig.5 Start up Current
1.15
1.1
1.05
Fig.6 Start Threshold Voltage
Istart
1.1
0.9
0.7
0.5
-25
Vstart
1
0.95
0.9
0
25
50
75
100 125 150
0.85
-25
0
25
50
75
100 125 150
Temperature [°C]
Figure 5. Start up Current
Temperature [°C]
Figure 6. Start Threshold Voltage
5
京公网安备 11010802033920号
EEWORLD
