TC55257CSPL-70 datasheet, PDF - EEWORLD Datasheet

TC55257CSPL-70: DescriptionSILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM; Categorystorage storage; File Size388KB，7 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TC55257CSPL-70 Overview

SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	DIP
package instruction	DIP, DIP28,.3
Contacts	28
Reach Compliance Code	unknow
ECCN code	EAR99
Is Samacsys	N
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PDIP-T28
JESD-609 code	e0
length	34.9 mm
memory density	262144 bi
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	5 V
Certification status	Not Qualified
Maximum seat height	4.45 mm
Maximum standby current	0.00005 A
Minimum standby current	2 V
Maximum slew rate	0.07 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm
Base Number Matches	1

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