RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72, HERMETIC SEALED, METAL PACKAGE-4
| Parameter Name | Attribute value |
| Maker | GE Solid State |
| package instruction | HERMETIC SEALED, METAL PACKAGE-4 |
| Reach Compliance Code | unknow |
| Shell connection | SOURCE AND SUBSTRATE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 20 V |
| Maximum drain current (ID) | 0.05 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 0.03 pF |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JEDEC-95 code | TO-72 |
| JESD-30 code | O-MBCY-W4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | DUAL GATE, DEPLETION MODE |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | N-CHANNEL |
| Minimum power gain (Gp) | 10 dB |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
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