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BAR43A

Description
0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size39KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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BAR43A Overview

0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE

BAR43A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeSOT-23
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.33 V
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Maximum non-repetitive peak forward current0.75 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.29 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
BAR43/A/C/S
BAR43/A/C/S
Connection Diagram
BAT43
3
3
3
BAT43A
3
D95
2
1
1
2
1
BAT43C
3
2NC
1
3
2
BAT43S
SOT-23
MARKING
BAT43 D95 BAT43A DB1
BAT43C DB2 BAT43S DA5
1
2
1
2
Schottky Diodes
Absolute Maximum Ratings *
Symbol
V
RRM
I
F(AV)
I
FSM
T
STG
T
J
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Storage Temperature Range
Operating Junction Temperature
Value
30
200
750
-55 to +150
150
Units
V
mA
mA
°C
°C
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
290
430
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
T
A
=25°C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
Test Conditions
I
R
= 100µA
I
F
= 2.0mA
I
F
= 15mA
I
F
= 100mA
V
R
= 25V
V
R
= 25V, T
a
= 100°C
I
F
= I
R
= 10mA, I
RR
= 1.0mA,
R
L
= 100Ω
Min.
30
260
Max.
330
450
0.8
0.5
100
5.0
80%
Units
V
mV
mV
V
µA
µA
ns
I
R
t
rr
Reverse Leakage
Reverse Recovery Time
Minimum Detection Recovery Time I
F
= I
R
= 10mA, I
RR
= 1.0mA,
R
L
= 100Ω
©2004 Fairchild Semiconductor Corporation
BAR43/A/C/S, Rev. C

BAR43A Related Products

BAR43A BAR43C
Description 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Is it Rohs certified? incompatible conform to
Maker Fairchild Fairchild
Parts packaging code SOT-23 SOT-23
package instruction R-PDSO-G3 R-PDSO-G3
Contacts 3 3
Reach Compliance Code unknow compli
ECCN code EAR99 EAR99
Configuration COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.33 V 0.33 V
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e3
Maximum non-repetitive peak forward current 0.75 A 0.75 A
Number of components 2 2
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Maximum output current 0.2 A 0.2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.29 W 0.29 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 30 V 30 V
Maximum reverse recovery time 0.005 µs 0.005 µs
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
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