BAR 63...
Silicon PIN Diode
l
PIN diode for high speed switching of RF signals
l
Low forward resistance
l
Very low capacitance
l
For frequencies up to 3 GHz
Type
BAR 63
BAR 63-04
BAR 63-05
BAR 63-06
Marking
G3
G4
G5
G6
Ordering code
(tape and reel)
Q62702-A1036
Q62702-A1037
Q62702-A1038
Q62702-A1039
Pin configuration Package
1
2
3
A
-
C
SOT-23
A
C
C/A
A
A
C/C
C
C
A/A
1)
Maximum ratings
Parameter
Reverse voltage
Forward current
Total Power dissipation T
S
≤
80°C
BAR 63-04,-05,-06
T
S
≤
55°C
Operating temperature range
Storage temperature range
Thermal resistance
Junction-ambient
BAR63
BAR 63-04,-05,-06
1)
Symbol
BAR 63
50
100
250
250
-55 +150°C
-55...+150°C
Unit
V
mA
mW
°C
°C
V
R
I
F
P
tot
T
op
T
stg
R
th JA
≤
450
≤
540
K/W
Junction-soldering point
BAR64
BAR63-04,-05,-06
R
th JS
≤
280
≤
380
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A01, 23.02.95
BAR 63...
Electrical characteristics
at
T
A
= 25
°C,
unless otherwise specified.
Parameter
Symbol
min.
Value
typ.
max.
Unit
DC characteristics
Breakdown voltage
I
R
= 5
µA
Reverse leakage
V
R
= 20 V
Forward voltage
I
F
= 100 mA
Diode capacitance
V
R
= 0 V,
f
= 100 MHz
Diode capacitance
V
R
= 5 V,
f
= 1 MHz
Forward resistance
I
F
= 5 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
Charge carrier lifetime
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
Series inductance
Forward current
I
F
=
f
(T
A
*T
S
)
BAR63
V
(BR)
50
-
-
0.95
0.3
0.21
1.2
1
75
1.4
-
V
nA
-
50
V
-
1.2
pF
-
-
pF
-
0.3
Ω
-
-
2
-
ns
-
-
-
-
nH
I
R
V
F
C
T
C
T
r
f
τ
s
L
s
Forward current
I
F
=
f
(T
A
*T
S
)
per each Diode BAR63-04,-05,-06
mA
mA
T
S
I
F
T
A
T
S
I
F
T
A
T
S
T
A
T
S
T
A
Semiconductor Group
2
Edition A01, 23.02.95