BAR65...
Silicon PIN Diode
Series diode for mobile communication in
low loss transmit-receiver switches
Band switch for TV-tuners
Low capacitance (typ. 0.5 pF @ 0V)
Fast switching applications
1
Type
BAR65-02L *
BAR65-02V
BAR65-03W
BAR65-07
* Preliminary Data
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Total power dissipation
BAR65-02V,
T
S
BAR65-02L,
T
S
BAR65-07,
T
S
57°C
T
j
T
op
T
stg
Junction temperature
Operating temperature range
Storage temperature
BAR65-03W,
T
S
Very low forward resistance (typ. 0.65
@ 5 mA)
BAR65-02L
BAR65-02V
BAR65-03W
BAR65-07
4
3
2
D 1
D 2
1
2
Package
TSLP-2-1
SC79
SOD323
SOT143
Configuration
single, leadless
single
single
parallel pair
L
S
(nH)
0.4
0.6
1.8
2
Marking
NN
N
M/blue
Ms
Symbol
V
R
I
F
P
tot
128°C
118°C
113°C
Value
30
100
250
250
250
250
150
-55 ... 125
-55 ... 150
Unit
V
mA
mW
°C
1
Feb-04-2003
BAR65...
Thermal Resistance
Parameter
Junction - soldering point
1)
BAR65-02L
BAR65-02V
BAR65-03W
BAR65-07
Symbol
R
thJS
90
130
145
370
Value
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Reverse current
V
R
= 20 V
Forward voltage
I
F
= 100 mA
1
For
Symbol
min.
I
R
V
F
-
-
Values
typ.
-
0.93
max.
20
1
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
Unit
nA
V
Feb-04-2003
BAR65...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 3 V,
f
= 1 MHz
V
R
= 0 V,
f
= 100 MHz ... 1.8 GHz
Reverse parallel resistance
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Forward resistance
I
F
= 1 mA,
f
= 100 MHz
I
F
= 5 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
I
F
= 10 mA,
I
R
= 6 mA, measured at
I
R
= 3 mA,
I-region width
Insertion loss
1)
I
F
= 1 mA,
f
= 1.8 GHz
I
F
= 5 mA,
f
= 1.8 GHz
I
F
= 10 mA,
f
= 1.8 GHz
Isolation
1)
V
R
= 0 V,
f
= 0.9 GHz
V
R
= 0 V,
f
= 1.8 GHz
V
R
= 0 V,
f
= 2.45 GHz
|S
21
|
2
-
-
-
-12
-7
-5
-
-
-
Symbol
min.
C
T
-
-
-
R
P
-
-
-
r
f
-
-
-
rr
Values
typ.
max.
Unit
pF
0.45
0.4
0.5
700
10
5
1
0.65
0.56
80
0.9
0.8
-
-
-
-
-
0.95
0.9
-
ns
k
Charge carrier life time
R
L
= 100
-
W
I
|S
21
|
2
-
-
-
-
3.5
-0.08
-0.06
-0.05
-
-
-
-
µm
dB
3
Feb-04-2003
1
BAR65-02L
in series configuration,
Z
= 50
BAR65...
Diode capacitance
C
T
=
f
= Parameter
0.5
F
10
4
KOhm
100 MHz
0.4
1 MHz ... 1.8 GHz
10
3
C
T
0.35
R
p
10
2
1 GHz
1.8 GHz
0.3
10
1
0.25
0.2
10
0
0.15
10
-1
0
0.1
0
2
4
6
8
10
12
14
16
V
20
2
4
6
8
10
12
14
16
V
R
f
= 100MHz
10
1
T
A
= Parameter
10
0
A
10
-1
Ohm
10
-2
10
0
I
F
r
f
10
-3
10
-4
10
-5
10
-1
10
-2
10
-1
10
0
10
1
mA
10
2
10
-6
0
0.2
0.4
I
F
4
Forward resistance
r
f
=
(I
F
)
Forward current
I
F
=
(V
F
)
-40 °C
25 °C
85 °C
125 °C
0.6
0.8
V
Feb-04-2003
(V
R
)
Reverse parallel resistance
R
P
= (
V
R
)
f
= Parameter
V
20
V
R
1.2
V
F
BAR65...
Forward current
I
F
=
BAR65-02L
120
mA
100
90
80
BAR65-02V
120
mA
100
90
80
I
F
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120
°C
150
I
F
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
BAR65-03W
120
mA
100
90
80
BAR65-07
120
mA
100
90
80
I
F
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120
°C
150
I
F
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
5
Forward current
I
F
=
(T
S
)
Forward current
I
F
=
(T
S
)
Forward current
I
F
=
(T
S
)
T
S
(T
S
)
T
S
Feb-04-2003
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