isc
Silicon NPN Power Transistor
2SC4331
DESCRIPTION
·Available
for high-current control in small dimension
·Low
collector saturation voltage
·Fast
switching speed
·High
DC current gain and excellent linearity
·100%
avalanche tested
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·This
transistor is ideal for use in Switching regulators,
DC/DC converters,motor drivers,Solenoid drivers
and other low-voltage power supply devices,as well
as for high-current switching.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
NOTE1
Collector Power Dissipation
@ T
C
=25℃
Collector Power Dissipation
@T
a
=25℃
NOTE2
Junction Temperature
Storage Temperature Range
VALUE
150
100
7
5
10
15
W
1.0
150
-55~150
℃
UNIT
V
V
V
A
A
I
CM
P
C
T
J
T
stg
℃
NOTE1:PW≤300ms,Duty cycle ≤10%
NOTE2:Printing boarding mounted
isc website
：
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isc & iscsemi
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isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CE
(sat)-1
NOTE
V
CE
(sat)-2
NOTE
V
BE(sat)-1NOTE
V
BE(sat)-2NOTE
I
CBO
I
EBO
h
FE-1NOTE
h
FE-2NOTE
h
FE-3NOTE
C
OB
f
T
PARAMETER
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
Output Capacitance
Current-Gain—Bandwidth Product
CONDITIONS
I
C
= 3A; I
B
= 150mA
I
C
= 4A; I
B
= 200mA
I
C
= 3A; I
B
= 150mA
I
C
= 4A; I
B
= 200mA
V
CB
= 100V; I
E
= 0
V
EB
= 5V; I
C
= 0
I
C
= 0.5A; V
CE
= 2V
I
C
= 1A; V
CE
= 2V
I
C
= 3A; V
CE
= 2V
I
E
= 0; V
CB
= 10V; f= 1.0MHz
I
C
= 500mA; V
CE
= 10V
100
100
60
MIN
2SC4331
TYP.
MAX
0.3
0.5
1.2
1.5
10
10
UNIT
V
V
V
V
μA
μA
400
60
150
pF
MHz
NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse
h
FE-2
Classifications
M
L
150-300
K
200-400
100-200
isc website
：
www.iscsemi.com
2
isc & iscsemi
is registered trademark
isc
Silicon NPN Power Transistor
2SC4331
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc website
：
www.iscsemi.com
3
isc & iscsemi
is registered trademark
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