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DSEI12-10A

Description
Fast Recovery Diode Rectifiers;12A;1000V;TO-220-2
CategoryDiscrete semiconductor   
File Size223KB,2 Pages
ManufacturerInchange Semiconductor
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DSEI12-10A Overview

Fast Recovery Diode Rectifiers;12A;1000V;TO-220-2

Fast Recovery Diode
DSEI12-10A
FEATURES
·With
TO-220 packaging
·Metal
silicon junction, majority carrier conduction
·Low
power loss, high efficiency
·Guardring
for overvoltage protection
·High
surge capability
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching
power supply
·High
frequency inverters
·Reverse
battery protection
·Polarity
protection applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
RRM
V
RMS
V
R
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
1000
V
I
F(AV)
Average Rectified Forward Current @Tc=128℃
12
A
I
FRM
Repetitive Peak Forward Current@Tc=128℃
Nonrepetitive Peak Surge Current
10 ms single half sine-wave superimposed on
rated load conditions;One shot(50Hz)
150
A
I
FSM
75
A
P
D
Maximum power dissipation
78
W
Tj
T
stg
Junction Temperature
Storage Temperature Range
1
-40~150
-40~150
isc website
www.iscsemi.com
isc & iscsemi
is registered trademark
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