PTF211301E datasheet, PDF - EEWORLD Datasheet

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PTF211301E: DescriptionRF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 30260, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size213KB，11 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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PTF211301E Overview

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 30260, 2 PIN

PTF211301E Parametric

Parameter Name	Attribute value
Maker	Infineon
package instruction	FLANGE MOUNT, R-CDFM-F2
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	S BAND
JESD-30 code	R-CDFM-F2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	438 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

PTF211301E Preview

PTF211301E

PTF211301F

Thermally-Enhanced High Power RF LDMOS FETs

130 W, 2110 – 2170 MHz

Description

The PTF211301E and PTF211301F are thermally-enhanced, 130-

watt, internally matched

GOLDMOS

FETs intended for WCDMA

applications. They are characaterized for single- and two-carrier

WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced

packaging provides the coolest operation available. Full gold

metallization ensures excellent device lifetime and reliability.

PTF211301E

Package 30260

PTF211301F*

Package 31260

Two-Carrier WCDMA Drive-Up

= 28 V, I

= 1.50 A, f = 2140 MHz,

3GPP WCDMA signal, P/A R = 8 dB,

10 MHz carrier spacing

-30

Efficiency

IM3

Features

•

Drain Efficiency (%)

Thermally-enhanced packaging (drop-in for

PTF211301A)

Broadband internal matching

Typical two-carrier WCDMA performance at 2140

MHz

- Average output power = 28 W

- Linear Gain = 13.5 dB

- Efficiency = 25%

- Intermodulation distortion = –37 dBc

- Adjacent channel power = –42 dBc

Typical CW performance, 2170 MHz, 28 V

- Output power at P–1dB = 148 W

- Efficiency = 50%

Integrated ESD protection: Human Body Model,

Class 1 (minimum)

Excellent thermal stability, low HCI drift

Capable of handling 10:1 VSWR @ 28 V,

130 W (CW) output power

IM3 (dBc), ACPR (dBc)

-35

-40

-45

-50

-55

-60

•

ACPR

•

Average Output Power (dBm)

ESD:

Electrostatic discharge sensitive device—observe handling

precautions!

RF Characteristics

at T

CASE

= 25°C unless otherwise indicated

WCDMA Measurements

(not subject to production test—verified by design/characterization in Infineon test fixture)

= 28 V, I

= 1.5 A, P

OUT

= 28 W average

= 2140 MHz, f

= 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8

dB @ 0.01% CCDF

Characteristic

Intermodulation Distortion

Gain

Drain Efficiency

*See Infineon distributor for future availability.

Data Sheet

1 of 11

Symbol

IMD

Min

—

Typ

–37

13.5

Max

—

Units

dBc

2004-09-07

PTF211301E

PTF211301F

RF Characteristics

(cont.)

Two-Tone Measurements

(tested in Infineon test fixture)

= 28 V, I

= 1.5 A, P

OUT

= 120 W PEP, f = 2170 MHz, tone spacing = 1 MHz

Characteristic

Gain

Drain Efficiency

Intermodulation Distortion

Symbol

Min

—

Typ

13.5

–30

Max

—

–28

Units

dBc

IMD

DC Characteristics

at T

CASE

= 25°C unless otherwise indicated

Characteristic

Drain-Source Breakdown Voltage

Drain Leakage Current

On-State Resistance

Operating Gate Voltage

Gate Leakage Current

Conditions

= 0 V, I

= 10 µA

= 28 V, V

= 0 V

= 10 V, V

= 0.1 V

= 28 V, I

= 1.5 A

= 10 V, V

= 0 V

Symbol

(BR)DSS

DSS

DS(on)

GSS

Min

—

2.5

—

Typ

—

0.07

3.2

—

Max

—

1.0

—

4.0

1.0

Units

µA

Ω

µA

Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Junction Temperature

Total Device Dissipation

Above 25°C derate by

Storage Temperature Range

Thermal Resistance (T

CASE

= 70°C, 130 W CW)

STG

θJC

Symbol

DSS

Value

–0.5 to +12

200

438

2.5

–40 to +150

0.40

Unit

°C

W/°C

°C

°C/W

Ordering Information

Type

PTF211301E

PTF211301F*

Package Outline

30260

31260

Package Description

Thermally-enhanced slotted flange, single-ended

Thermally-enhanced earless flange, single-ended

Marking

PTF211301E

PTF211301F

*See Infineon distributor for future availability.

Data Sheet

2 of 11

2004-09-07

PTF211301E

PTF211301F

Typical Performance

(data taken in a production test fixture)

Broadband Performance

= 28 V, I

= 1.50 A, P

OUT

= 44 dBm

Intermodulation Distortion Products &

Efficiency vs. Output Power

= 28V, I

= 1.50 A, f = 2140 MHz,

tone spacing = 1 MHz

-5

Input Return Loss

-10

-30

-35

Efficiency

IM3

IM5

Gain (dB), Efficiency (%)

Gain

2060

Efficiency

Input Return Loss (dB)

-15

-20

-25

-30

-35

-40

2210

-40

IMD (dBc)

-45

-50

-55

-60

-65

-70

IM7

2085

2110

2135

2160

2185

Frequency (MHz)

Output Power, PEP (dBm)

Intermodulation Distortion vs. Output Power

= 28V, f = 2140 MHz, tone spacing = 1 MHz

-30

1.20 A

1.65 A

Power Sweep, CW Conditions

= 28 V, I

= 1.50 A, f = 2170 MHz

CASE

= 25°C

CASE

= 90°C

Gain

Efficiency

3rd Order IMD (dBc)

-40

-50

Gain (dB)

-60

1.35 A

-70

1.50 A

Peak Output Power (dBm)

Output Power (dBm)

Data Sheet

3 of 11

2004-09-07

Drain Efficiency (%)

1.80 A

Drain Efficiency (%)

PTF211301E

PTF211301F

Typical Performance

(cont.)

Single-Carrier WCDMA Drive-Up

= 28 V, I

= 1.50 A, f = 2140 MHz, 3GPP WCDMA

signal, P/A R = 8.5 dB, 3.84 MHz bandwidth

Adjacent Channel Power Ratio (dBc)

-40

-42

-44

-46

-48

-50

-52

-54

-56

-58

-60

ACPR Low

ACPR Up

Efficiency

IM3, Gain & Drain Efficiency

vs. Supply Voltage

= 1.50 A, f = 2140 MHz, P

OUT

= 47.8 dBm PEP,

tone spacing = 1 MHz

-5

Efficiency

IM3 Up

Gain

23 24 25

26 27 28 29 30

31 32 33

-10

IM3 (dBc)

-15

-20

-25

-30

-35

-40

-45

Average Output Power (dBm)

Supply Voltage (V)

Intermodulation Distortion Products

vs. Tone Spacing

= 28 V, I

= 1.50 A, , P

OUT

= 50.8 dBm PEP,

f = 2140 MHz

-10

Gate-Source Voltage vs. Case Temperature

Voltage normalized to typical gate voltage,

series show current

1.03

Intermodulation Distortion (dBc)

-20

Normalized Bias Voltage

1.02

1.01

1.00

0.99

0.98

0.97

0.96

-20

3rd Order

-30

-40

-50

2.25 A

4.50 A

6.75 A

9.00 A

11.25 A

13.50 A

5th Order

7th Order

-60

100

Tone Spacing (MHz)

Case Temperature (°C)

Data Sheet

4 of 11

2004-09-07

Gain (dB), Efficiency (%)

Drain Efficiency (%)

PTF211301E

PTF211301F

Broadband Circuit Impedance

= 50

Ω

0 .1

Z Source

Z Load

NGT

Z Load

2220 MHz

0.0

0.1

LOA

TOW

NGT

ELE

2050 MHz

Frequency

MHz

2050

2110

2140

2170

2220

Z Source

Ω

–7.02

–6.76

–6.75

–6.54

–6.36

6.58

6.14

5.96

5.82

5.45

Z Load

Ω

1.43

1.27

1.19

1.25

1.12

0.19

0.66

0.80

1.09

1.49

Z Source

0. 1

2220 MHz

2050 MHz

See next page for circuit information.

Data Sheet

5 of 11

<---

2004-09-07

0.2

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PTF211301E Related Products

	PTF211301E	PTF211301F
Description	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 30260, 2 PIN	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 31260, 2 PIN
Maker	Infineon	Infineon
package instruction	FLANGE MOUNT, R-CDFM-F2	FLATPACK, R-CDFP-F2
Contacts	2	2
Reach Compliance Code	compli	compliant
ECCN code	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	65 V	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	S BAND	S BAND
JESD-30 code	R-CDFM-F2	R-CDFP-F2
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLATPACK
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	438 W	438 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	MATTE TIN	MATTE TIN
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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