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PTFB193404F-340W

Description
RF Power Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size217KB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

PTFB193404F-340W Overview

RF Power Field-Effect Transistor

PTFB193404F-340W Parametric

Parameter NameAttribute value
MakerInfineon
package instruction,
Reach Compliance Codecompli
PTFB193404F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
340 W, 30 V, 1930 – 1990 MHz
Description
The PTFB193404F is a 340-watt LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 1930 to 1990
MHz frequency band. Features include input and output matching, high
gain and thermally-enhanced package with earless flange. Manufactured
with Infineon’s advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
PTFB193404F
Package H-37275-6/2
Features
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-20
-25
40
35
30
25
Broadband internal matching
Wide video bandwidth
Typical single-carrier WCDMA performance,
1990 MHz, 30 V
- Output power = 100 W
- Efficiency = 33%
- Gain = 19 dB
- PAR = 7.5 dB @ 0.01% CCDF
- ACPR @ 5 MHz = –35 dBc
Increased negative gate-source voltage range
for improved performance in Doherty amplifiers
Capable of handling 10:1 VSWR @ 30 V, 340 W
(CW) output power
Integrated ESD protection
Excellent thermal stability
Pb-free and RoHS compliant
IMD, ACPR (dBc)
A
-30
-35
-40
-45
-50
-55
-60
36
38
40
42
IMD Low
ACPR
IMD Up
44
46
48
50
52
Drain Efficiency (%)
E
Efficiency
20
15
10
5
0
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 2.6 A, P
OUT
= 80 W average, ƒ = 1990 MHz,
3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10.0 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
17.5
29
Typ
19
33
–34.5
Max
–32.5
Unit
dB
%
dBc
η
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
– DRAFT ONLY
1 of 14
Rev. 05.1, 2011-05-13
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