PTMA210152M
Wideband RF LDMOS Integrated Power Amplifier
15 W, 28 V, 1800 – 2200 MHz
Description
The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS
integrated amplifier intended for wideband driver applications in the
1800 to 2200 MHz band. This device is offered in a 20-lead thermally-
enhanced overmolded package for cool and reliable operation.
PTMA210152M
Package PG-DSO-20-63
Broadband Performance
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA
fixture tuned for 2110 - 2170 MHz
32
28
20
10
0
-10
Features
•
•
•
Designed for wide RF bandwidth and low memory
effects
Broadband input on-chip matching
Typical two-carrier WCDMA performance at
2140 MHz, 28 V, 7 W avg.
- Gain = 28.5 dB
- Power Added Efficiency = 33 %
- IMD3 = –32 dBc
Typical CW performance at 2140 MHz, 28 V
- Output power at P
1dB
~ 20 W
- Efficiency > 49%
Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F.
Capable of handling 10:1 VSWR @ 28 V,
15 W (CW) output power
Thermally-enhanced RoHS-compliant package
24
20
Return Loss (dB)
Gain
Gain (dB)
G
•
Return Loss
16
12
1500
1700
1900
2100
2300
-20
-30
2500
•
•
•
Frequency (MHz)
RF Characteristics
Two-carrier WCDMA Specifications
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DS
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA, ƒ = 2110 – 2170 MHz, P
OUT
= 7 W average
Characteristic
Gain
Power Added Efficiency
Input Return Loss
Adjacent Channel Power Ratio
Third Order Intermodulation Distortion
Spurs Load 3:1
Gain Flatness
Symbol
G
ps
PAE
IRL
ACPR
IMD3
—
Min
—
—
—
—
—
—
—
Typ
28.5
33
–14
–36
–32
–60
0.43
Max
—
—
—
—
—
—
—
Unit
dB
%
dB
dBc
dBc
dBc
dB
Δ
G
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 15
Rev. 09, 2014-05-07
PTMA210152M
RF Characteristics
(cont.)
Two-tone Measurement
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA, P
OUT
= 8 W AVG, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Third Order Intermodulation Distortion
Input Return Loss
Symbol
G
ps
Min
27.5
33
—
—
Typ
28.5
34
–33
–14
Max
30
—
–31
–10
Unit
dB
%
dBc
dB
η
D
IMD3
IRL
DC Characteristics
Stage 1 Characteristic
Drain Leakage Current
Conditions
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
—
—
—
2
—
Typ
—
—
3.5
2.5
—
Max
1.0
10.0
—
3
1.0
Unit
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 80 mA
V
GS
= 10 V, V
DS
= 0 V
Stage 2 Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2
—
Typ
—
—
—
0.6
2.5
—
Max
—
1.0
10.0
—
3
1.0
Unit
V
µA
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 160 mA
V
GS
= 10 V, V
DS
= 0 V
Ω
V
µA
Data Sheet
2 of 15
Rev. 09, 2014-05-07
PTMA210152M
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Input Power
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 15 W CW)
Stage 1
Stage 2
T
STG
R
θ
JC
R
θ
JC
Symbol
V
DSS
V
GS
T
J
P
IN
P
D
Value
65
–0.5 to +12
200
15
70
0.4
–40 to +150
10.7
2.9
Unit
V
V
°C
dBm
W
W/°C
°C
°C/W
°C/W
Moisture Sensitivity Level
Level
3
Test Standard
IPC/JEDEC J-STD-020
Package Temperature
260
Unit
°C
Ordering Information
Type and Version
PTMA210152M V1
PTMA210152M V1 R500
Order Code
PTMA210152MV1AUMA1
PTMA210152MV1R500AUMA1
Package and Description
PG-DSO-20-63, molded plastic
PG-DSO-20-63, molded plastic
Shipping
Tape & Reel, 250 pcs
Tape & Reel, 500 pcs
Data Sheet
3 of 15
Rev. 09, 2014-05-07
PTMA210152M
Typical Performance, circuit tuned for 2140 MHz
(data taken in a production test fixture)
CW Performance
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA
for 2110, 2140, 2170 MHz
30
28
55
WCDMA Performance
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA,
series show 2110, 2140, 2170 MHz
45
-25
2110 MHz
2140 MHz
2170 MHz
Power Add Efficiency (%)
ded
Power Add Efficiency (%)
ded
Gain
2110 MHz
2140 MHz
2170 MHz
45
35
25
15
40
35
30
25
20
15
ACPR
-30
26
24
22
20
29
-40
-45
-50
-55
PAE
31
33
35
37
39
41
43
45
PAE
10
30
32
34
36
38
40
-60
5
Output Power (dBm)
Output Power (dBm)
Two-tone Drive-up
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA
For 2110, 2140, 2170 MHz
Two-carrier WCDMA Performance
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA,
series show 2110, 2140, 2170 MHz
5
45
Power Add Efficiency (%)
ded
40
35
30
25
20
15
10
5
30
2110 MHz
2140 MHz
2170 MHz
-5
-15
-25
Power Add Efficiency (%)
ded
PAE
45
40
35
30
25
20
15
10
30
32
34
36
38
40
42
2110 MHz
2140 MHz
2170 MHz
-25
-30
-35
-40
IM
MD3 (dBc)
IMD3
-35
-45
-55
-65
-75
IMD3
-45
-50
PAE
-55
-60
32
34
36
38
40
42
44
Output Power, avg. ( dBm )
Output Power (dBm)
Data Sheet
4 of 15
Rev. 09, 2014-05-07
IMD (dBc)
D3
ACPR (dBc)
-35
Gain (dB)
G
PTMA210152M
Typical Performance—2140 MHz
(cont.)
Two-carrier WCDMA Performance
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA,
series show 2110, 2140, 2170 MHz
Two-carrier WCDMA Performance
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA,
ƒ = 2140 MHz
Power Ad
dded Efficiency (%)
45
40
35
30
25
20
15
10
30
32
34
36
38
40
42
2110 MHz
2140 MHz
2170 MHz
-25
-30
45
-25
–
25 °C
Power Add Efficiency (%)
ded
40
35
30
25
20
15
10
30
-30
AC
CPR (dBc)
-35
-40
-40
AC
CPR (dBc)
-35
25 °C
90 °C
ACPR
-45
-50
ACPR
-45
-50
PAE
-55
-60
PAE
-55
-60
32
34
36
38
40
42
Output Power (dBm)
Output Power (dBm)
Six-carrier TD-SCDMA Performance
V
DD
= 28 V, I
DQ1
= 80 mA, I
DQ2
= 160 mA
45
-25
-30
Power Add Efficiency (%)
ded
40
35
30
-40
ACPR
25
20
15
2110 MHz
2140 MHz
2170 MHz
-45
-50
-55
-60
30
32
34
36
38
40
42
PAE
10
Output Power (dBm)
Data Sheet
AC
CPR (dBc)
-35
5 of 15
Rev. 09, 2014-05-07
FPGA/CPLD
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