PXAC203302FV
Thermally-Enhanced High Power RF LDMOS FET
330 W, 28 V, 1880 – 2025 MHz
Description
The PXAC203302FV is a 330-watt LDMOS FET with an asym-
metrical design intended for use in multi-standard cellular power
amplifier applications in the 1880 to 2025 MHz frequency band.
Features include dual-path design, input matching, high gain and
thermally-enhanced package with earless flanges. Manufactured
with Infineon's advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
PXAC203302FV
Package H-37275-4
Features
V
DD
= 28 V, I
DQ
= 900 mA, ƒ = 2025 MHz,
3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
Peak/Average Ratio, Gain (dB)
24
20
16
12
8
4
0
c203302fv_g1
Single-carrier WCDMA Drive-up
•
Broadband internal input and output matching
•
Asymmetrical Doherty design
- Main : P
1dB
= 130 W Typ
- Peak : P
1dB
= 200 W Typ
•
Typical Pulsed CW performance, 2025 MHz, 28 V,
combined outputs, Doherty Configuration
- Output power at P
1dB
= 250 W
- Efficiency = 55%
- Gain = 16 dB
•
Capable of handling 10:1 VSWR @28 V, 250 W
(CW) output power
•
Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
•
Integrated ESD protection
•
Low thermal resistance
•
Pb-free and RoHS compliant
60
Efficiency
40
Gain
0
PAR @ 0.01% CCDF
-20
-40
-60
25
30
35
40
45
50
55
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Infineon Doherty test fixture)
V
DD
= 28 V, I
DQ
= 900 mA, V
GSPEAK
= 1.1 V, P
OUT
= 56 W avg, ƒ
1
= 2025 MHz, 3GPP signal, channel bandwidth = 3.84MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjancent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Efficiency (%)
20
Symbol
G
ps
Min
15
45
—
Typ
16
49
–30.5
Max
—
—
–26
Unit
dB
%
dBc
h
D
ACPR
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 02.1, 2016-06-22
PXAC203302FV
DC Characteristics
(each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V(
BR)DSS
I
DSS
I
DSS
R
DS(on)
R
DS(on)
V
GS
V
GS
I
GSS
Min
65
—
—
—
—
2.5
0.6
—
Typ
—
—
—
0.088
0.088
2.7
1.1
—
Max
—
1
10
—
—
2.8
1.4
1
Unit
V
µA
µA
W
W
V
V
µA
On-State Resistance (main)
On-State Resistance
(peak)
Operating Gate Voltage (main)
(peak)
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 900 mA
V
DS
= 28 V, I
DQ
= 0 A
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (main, T
CASE
= 70°C, 56.2 W CW)
(peak, T
CASE
= 70°C, 260 W CW)
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
qJC
R
qJC
Value
65
–6 to +10
0 to +32
225
–65 to +150
0.62
0.35
Unit
V
V
V
°C
°C
°C/W
°C/W
Ordering Information
Type and Version
PXAC203302FV V1 R0
PXAC203302FV V1 R250
Order Code
PXAC203302FVV1R0XTMA1
PXAC203302FVV1R250XTMA1
Package Description
H-37275-4, earless flange
H-37275-4, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 8
Rev. 02.1, 2016-06-22
PXAC203302FV
Typical Performance
(data taken in a production test fixture)
V
DD
= 28 V, I
DQ
= 900 mA, ƒ = 2025 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
-10
60
50
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 47.5 dBm,
3GPP WCDMA signal, PAR = 10 dB
30
50
Single-carrier WCDMA Broadband
Performance
ACP Up & Low (dBc)
-20
-30
-40
-50
-60
-70
ACPU
ACPL
Efficiency
25
Efficiency(%)
30
20
10
0
20
Gain
40
15
35
27
32
37
42
47
52
c203302fv_g2
57
10
1750
1850
1950
2050
c203302fv_g3
30
2150
Average Output Power (dBm)
Frequency (MHz)
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 47.5 dBm,
3GPP WCDMA signal, PAR = 10 dB
-15
-5
24
20
Single-carrier WCDMA Broadband
Performance
V
DD
= 28 V, I
DQ
= 900mA
2010MHz Gain
2025MHz Gain
1920MHz Gain
1880MHz Gain
2025MHz Eff
2010MHz Eff
1920MHz Eff
1880MHz Eff
CW Performance
60
50
40
ACPL & ACP Up (dBc)
Return Loss (dB)
Gain (dB)
16
12
8
4
Gain
-25
-15
30
20
10
Efficiency
c203302fv_g5
-30
-35
1750
ACPU
ACPL
IRL
-20
1850
1950
2050
c203302fv_g4
-25
2150
0
29
33
37
41
45
49
53
57
0
Frequency (MHz)
Output Power (dBm)
Data Sheet
3 of 8
Rev. 02.1, 2016-06-22
Efficiency (%)
-20
-10
Efficiency (%)
Gain (dB)
40
Efficiency
45
PXAC203302FV
Typical Performance
(cont.)
CW Performance
at various V
DD
CW Performance Small Signal
Gain & Input Return Loss
V
DD
= 28 V, I
DQ
= 900 mA
I
DQ
= 900 mA, ƒ = 2025 MHz
24
20
24V Gain
28V Gain
32V Gain
24V Eff
28V Eff
32V Eff
60
50
18
IRL
-5
Power Gain (dB)
Gain
12
8
4
Efficiency
30
20
10
c203302fv_g6
Gain (dB)
16
40
17
-10
16
Gain
-15
0
29
33
37
41
45
49
53
57
0
15
1825
c203302fv_g7
1875
1925
1975
2025
-20
2075
Output Power (dBm)
Frequency (MHz)
Load Pull Performance
Main Side Load Pull Performance
– Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, I
DQ
= 800 mA, Class AB
P
1dB
Max Output Power
Freq
[MHz]
1880
1900
1920
2010
2025
Zs
[
W]
2.78 – j6.42
2.94 – j6.93
3.81 – j7.27
6.13 – j8.11
8.73 – j8.92
Zl
[
W
]
1.33 – j2.33
1.31 – j2.40
1.30 – j2.46
1.17 – j2.61
1.29 – j2.65
Gain
[dB]
18.5
18.5
18.5
18.4
18.8
P
OUT
[dBm]
52.5
52.5
52.4
52.1
52.2
P
OUT
[W]
179
176
174
164
168
Max Drain Efficiency
h
D
[%]
55.1
54.4
53.8
50.6
53.9
Zl
[
W
]
3.40 – j1.31
2.82 – j1.21
2.61 – j1.25
2.19 – j1.29
2.19 – j1.35
Gain
[dB]
21.2
21.2
21.0
21.2
21.2
P
OUT
[dBm]
50.0
50.1
50.4
50.0
50.1
P
OUT
[W]
100
102
108
100
101
h
D
[%]
66.7
65.5
65.6
63.2
62.9
Peak Side Load Pull Performance
– Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, V
GS
= 1.4 V, Class C
P
1dB
Max Output Power
Freq
[MHz]
1880
1900
1920
2010
2025
Zs
[
W]
1.47 – j3.68
1.52 – j4.02
1.54 – j4.21
2.84 – j4.51
4.34 – j5.13
Zl
[
W
]
2.40 – j2.40
2.08 – j2.31
2.29 – j2.39
2.51 – j2.67
2.68 – j2.58
Gain
[dB]
15.4
15.8
15.9
16.1
16.4
P
OUT
[dBm]
54.0
54.0
53.9
53.7
53.8
P
OUT
[W]
250
249
247
236
192
[%]
54.8
55.8
55.6
54.5
55.2
Max Drain Efficiency
h
D
Zl
[
W
]
1.69 – j0.40
1.58 – j0.55
1.44 – j0.58
1.50 – j1.19
1.37 – j1.22
Gain
[dB]
16.5
16.9
17.0
17.2
17.3
P
OUT
[dBm]
52.0
52.1
51.9
52.1
51.9
P
OUT
[W]
159
164
156
162
155
h
D
[%]
65.4
66.9
66.7
64.3
64.6
Data Sheet
4 of 8
Rev. 02.1, 2016-06-22
Input Return Loss (dB)
Efficiency (%)
Analog electronics
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