PXAC261202FC
Thermally-Enhanced High Power RF LDMOS FET
120 W, 28 V, 2496 – 2690 MHz
Description
The PXAC261202FC is a 120-watt LDMOS FET with an asymetric
design for use in multi-standard cellular power amplifier applications
in the 2496 to 2690 MHz frequency band. It features dual-path design,
input and output matching, and a thermally-enhanced package with
earless flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PXAC261202FC
Package H-37248-4
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 220 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
16
15
14
13
50
45
Features
•
•
Broadband internal matching
CW performance in a Doherty configuration, 2555
MHz, 28 V
- Output power at P
1dB
= 80 W
- Gain = 13.6 dB
- Efficiency = 48%
Single-carrier WCDMA performance in a Doherty
configuration, 2555 MHz, 28 V, 8 dB PAR
- Output power 28 W
- Gain = 14.3 dB
- Efficiency = 44.5%
- ACPR –30 dBc @ 5 MHz
Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
Low thermal resistance
Pb-free and RoHS compliant
Gain
Drain Efficiency (%)
40
35
30
25
2555 MHz
2585 MHz
2615 MHz
20
15
10
c261202fc-gr13
•
Gain (dB)
12
11
10
9
8
7
29
33
37
41
45
•
•
•
Efficiency
49
5
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Specifications
(tested in Infineon Doherty test fixture)
V
DD
= 28 V, V
GS(peak)
= 0.9 V, I
DQ
= 230 mA, P
OUT
= 28 W average, ƒ
1
= 2610 MHz, ƒ
2
= 2620 MHz. 3GPP WCDMA signal:
3.84 MHz bandwidth, 8 dB PAR @0.01% CCDF.
Characteristic
Linear Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
12.5
41.0
—
Typ
13.5
45
–29.5
Max
—
—
–26.0
Unit
dB
%
dBc
η
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 02, 2014-02-26
PXAC261202FC
DC Characteristics
Characteristic
Drain-source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
I
GSS
R
DS(on)
R
DS(on)
V
GS
V
GS
Min
65
—
—
—
—
—
2.1
0.4
Typ
—
—
—
—
0.19
0.16
2.6
0.9
Max
—
1.0
10.0
1.0
—
—
3.1
1.4
Unit
V
µA
µA
µA
Gate Leakage Current
On-state Resistance
(main)
(peak)
Operating Gate Voltage
(main)
(peak)
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 0.23 A
V
DS
= 28 V, I
DQ
= 0 A
Ω
Ω
V
V
Maximum Ratings
Parameter
Drain-source Voltage
Gate-source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 100 W CW)
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
θ
JC
Value
65
–6 to +10
0 to +32
225
–65 to +150
0.48
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PXAC 261202FC V1
PXAC 261202FC V1 R250
Order Code
PXAC261202FCV1XWSA1
PXAC261202FCV1R250XTMA1
Package and Description
H-37248-4, ceramic open-cavity, earless
H-37248-4, ceramic open-cavity, earless
Shipping
Tray
Tape & Reel, 250 pcs
Pinout Diagram
(top view)
S
D1
D2
Main
G1
Peak
H-37248-4_pd_10-10-2012
Pin
D1
D2
G1
G2
S
Description
Drain device 1 (main)
Drain device 2 (peak)
Gate device 1 (main)
Gate device 2 (peak)
Source (flange)
G2
Data Sheet
2 of 9
Rev. 02, 2014-02-26
PXAC261202FC
Typical Performance
(data taken in Infineon Doherty reference test fixture)
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 220 mA, ƒ = 2615 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-10
50
-10
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 220 mA, ƒ = 2555 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
50
40
30
20
IMD Low
IMD Up
ACPR
Efficiency
c261202fc-gr4
IMD (dBc), ACPR (dBc)
IMD (dBc), ACPR (dBc)
Drain Efficiency (%)
-30
-40
IMD Low
IMD Up
30
20
10
0
-30
-40
-50
-60
29
33
37
41
45
-50
-60
29
33
37
41
ACPR
Efficiency
10
0
c261202fc-gr5
45
49
49
Output Power (dBm)
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 220 mA, ƒ = 2585 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-10
50
40
30
20
IMD Low
IMD Up
ACPR
Efficiency
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 220 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
IMD (dBc), ACPR (dBc)
Drain Efficiency (%)
-20
-30
-40
-50
-60
29
33
37
41
45
-25
IMD (dBc)
-30
10
0
-35
2615 IMDL
2555 IMDL
2585 IMDL
29
34
39
44
2615 IMDU
2555 IMDU
2585 IMDU
c261202fc-gr7
c261202fc-gr6
-40
49
49
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 9
Rev. 02, 2014-02-26
Drain Efficiency (%)
-20
40
-20
京公网安备 11010802033920号
EEWORLD
