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BAS116LT1

Description
0.2 A, SILICON, SIGNAL DIODE, TO-236AB
CategoryDiscrete semiconductor    diode   
File Size35KB,2 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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BAS116LT1 Overview

0.2 A, SILICON, SIGNAL DIODE, TO-236AB

BAS116LT1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
Maximum non-repetitive peak forward current0.5 A
Number of components1
Maximum operating temperature150 °C
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.003 µs
surface mountYES
Maximum time at peak reflow temperatureNOT SPECIFIED
LESHAN RADIO COMPANY, LTD.
Switching Diode
This switching diode has the following features:
• Low Leakage Current Applications
• Medium Speed Switching Times
• Available in 8 mm Tape and Reel
Use BAS116LT1 to order the 7 inch/3,000 unit reel
Use BAS116LT3 to order the 13 inch/10,000 unit reel
3
CATHODE
1
ANODE
1
2
BAS116LT1
3
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
Value
75
200
500
Unit
Vdc
mAdc
mAdc
DEVICE MARKING
BAS116LT1 = JV
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
P
D
Symbol
P
D
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
I
R
Min
––
––
75
––
––
Max
5.0
80
900
1000
1100
1250
2.0
3.0
Unit
nAdc
OFF CHARACTERISTICS
Reverse Voltage Leakage Current (V
R
= 75 Vdc )
(V
R
= 75 Vdc , T
J
=150°C)
Reverse Breakdown Voltage
(I
BR
= 100
µAdc)
Forward Voltage (I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Diode Capacitance(V
R
= 0, f = 1.0 MHz)
Reverse Recovery Time
(I
F
= I
R
= 10mAdc, )( Figure 1)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)
V
F
Vdc
mV
C
D
t
rr
pF
µs
G4–1/2

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