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BAS125

Description
0.1 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size104KB,5 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BAS125 Overview

0.1 A, SILICON, SIGNAL DIODE

BAS125 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSIEMENS
package instructionR-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage25 V
Maximum reverse current1 µA
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Silicon Schottky Diodes
q
For low-loss, fast-recovery, meter protection,
BAS 125 …
bias isolation and clamping applications
q
Integrated diffused guard ring
q
Low forward voltage
ESD: Electrostatic discharge
sensitive device, observe handling precautions!
Type
BAS 125
BAS 125-04
Marking
13
14
Ordering Code Pin Configuration
(tape and reel)
Q62702-D1316
Q62702-D1321
Package
1)
SOT-23
BAS 125-05
15
Q62702-D1322
BAS 125-06
16
Q62702-D1323
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
02.96

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