Silicon Schottky Diodes
q
For low-loss, fast-recovery, meter protection,
BAS 125 …
bias isolation and clamping applications
q
Integrated diffused guard ring
q
Low forward voltage
ESD: Electrostatic discharge
sensitive device, observe handling precautions!
Type
BAS 125
BAS 125-04
Marking
13
14
Ordering Code Pin Configuration
(tape and reel)
Q62702-D1316
Q62702-D1321
Package
1)
SOT-23
BAS 125-05
15
Q62702-D1322
BAS 125-06
16
Q62702-D1323
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
02.96
BAS 125 …
q
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
q
Integrated diffused guard ring
q
Low forward voltage
ESD: Electrostatic discharge
sensitive device, observe handling precautions!
Type
BAS 125-07
Marking
17
Ordering Code Pin Configuration
(tape and reel)
Q62702-D1327
Package
1)
SOT-143
Maximum Ratings per Diode
Parameter
Reverse voltage
Forward current
Surge forward current,
t
≤
10 ms
Total power dissipation,
T
S
≤
25 ˚C
3)
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
725
≤
565
Symbol
V
R
I
F
I
FSM
P
tot
T
j
T
stg
Values
25
100
500
250
150
– 55 … + 150
Unit
V
mA
mW
˚C
K/W
1)
2)
3)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm
×
16.7 mm
×
0.7 mm.
450 mW per package.
Semiconductor Group
2
BAS 125 …
Electrical Characteristics per Diode
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Reverse current
V
R
= 20 V
V
R
= 25 V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 35 mA
Diode capacitance
V
R
= 0,
f
= 1 MHz
Differential forward resistance
I
F
= 5 mA,
f
= 10 kHz
Symbol
min.
I
R
–
–
V
F
–
–
–
C
T
R
F
–
–
385
530
800
–
15
410
–
900
1.1
–
pF
Ω
–
–
1
10
mV
Values
typ.
max.
µ
A
Unit
Semiconductor Group
3
BAS 125 …
Forward current
I
F
=
f
(V
F
)
Forward current
I
F
=
f
(T
S
; T
A
*)
*Package mounted on alumina
BAS 125-04, -05, -06, -07
Forward current
I
F
=
f
(T
S
; T
A
*)
*Package mounted on alumina
BAS 125
Reverse current
I
R
=
f
(V
R
)
Semiconductor Group
4
BAS 125 …
Diode capacitance
C
T
=
f
(V
R
)
f
= 1 MHz
Differential forward resistance
R
F
=
f
(I
F
)
f
= 10 kHz
Semiconductor Group
5
京公网安备 11010802033920号
EEWORLD
