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BDW23

Description
6A, 45V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size150KB,6 Pages
ManufacturerJ.W. Miller ( Bourns )
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6A, 45V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN

BDW23 Parametric

Parameter NameAttribute value
MakerJ.W. Miller ( Bourns )
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage45 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
BDW23, BDW23A, BDW23B, BDW23C
NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with
BDW24, BDW24A, BDW24B and BDW24C
50 W at 25°C Case Temperature
6 A Continuous Collector Current
Minimum h
FE
of 750 at 3 V, 2 A
B
C
E
q
q
q
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BDW23
Collector-base voltage (I
E
= 0)
BDW23A
BDW23B
BDW23C
BDW23
Collector-emitter voltage (I
B
= 0)
BDW23A
BDW23B
BDW23C
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
B
P
tot
P
tot
T
j
T
stg
T
A
V
CEO
V
CBO
SYMBOL
VALUE
45
60
80
100
45
60
80
100
5
6
0.2
50
2
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
°C
°C
°C
V
V
UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

BDW23 Related Products

BDW23 BDW23C
Description 6A, 45V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN 6A, 100V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
Maker J.W. Miller ( Bourns ) J.W. Miller ( Bourns )
Parts packaging code SFM SFM
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 6 A 6 A
Collector-emitter maximum voltage 45 V 100 V
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 100 100
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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