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BAS125-06W

Description
0.1 A, 25 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size108KB,5 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BAS125-06W Overview

0.1 A, 25 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAS125-06W Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak forward current0.5 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum reverse current0.2 µA
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
BAS 125W
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAS 125-04W
BAS 125-04W
BAS 125-06W
ESD: ElectroStatic Discharge
sensitive device, observe handling precautions!
Type
Marking Ordering Code Pin Configuration
BAS 125-04W
BAS 125-05W
BAS 125-06W
BAS 125W
Parameter
Diode reverse voltage
Forward current
Surge forward current (t
≤ 10ms)
Total Power dissipation
14s
15s
16s
13s
Q62702-
Q62702-
Q62702-
Q62702-
1 = A1
1 = A1
1 = C1
1=A
Symbol
2 = C2
2 = A2
2 = C2
Package
3=C1/A2 SOT-323
3=C1/C2 SOT-323
3=A1/A2 SOT-323
3=C
Values
25
100
500
mW
250
150
- 55 ... + 150
310
425
230
265
°C
SOT-323
Unit
V
mA
Maximum Ratings
V
R
I
F
I
FSM
P
tot
T
j
T
stg
1)
1)
T
S
25 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient, BAS125W
R
thJA
R
thJA
R
thJS
R
thJS
K/W
Junction ambient, BAS 125-04W...06W
Junction - soldering point, BAS125W
Junction - soldering point, BAS125-04W...06W
1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm
Semiconductor Group
1
Dec-20-1996

BAS125-06W Related Products

BAS125-06W BAS125-04W BAS125-05W BAS125W
Description 0.1 A, 25 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 25 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 25 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, SILICON, SIGNAL DIODE
Maker SIEMENS SIEMENS SIEMENS SIEMENS
package instruction R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Reach Compliance Code unknown unknown unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration COMMON ANODE, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.9 V 0.9 V 0.9 V 0.9 V
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Maximum non-repetitive peak forward current 0.5 A 0.5 A 0.5 A 0.5 A
Number of components 2 2 2 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Maximum output current 0.1 A 0.1 A 0.1 A 0.1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.25 W 0.25 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum reverse current 0.2 µA 0.2 µA 0.2 µA 0.2 µA
surface mount YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Base Number Matches 1 1 - 1
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