BAS 125W
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAS 125-04W
BAS 125-04W
BAS 125-06W
ESD: ElectroStatic Discharge
sensitive device, observe handling precautions!
Type
Marking Ordering Code Pin Configuration
BAS 125-04W
BAS 125-05W
BAS 125-06W
BAS 125W
Parameter
Diode reverse voltage
Forward current
Surge forward current (t
≤ 10ms)
Total Power dissipation
14s
15s
16s
13s
Q62702-
Q62702-
Q62702-
Q62702-
1 = A1
1 = A1
1 = C1
1=A
Symbol
2 = C2
2 = A2
2 = C2
Package
3=C1/A2 SOT-323
3=C1/C2 SOT-323
3=A1/A2 SOT-323
3=C
Values
25
100
500
mW
250
150
- 55 ... + 150
≤
310
≤
425
≤
230
≤
265
°C
SOT-323
Unit
V
mA
Maximum Ratings
V
R
I
F
I
FSM
P
tot
T
j
T
stg
1)
1)
T
S
≤
25 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient, BAS125W
R
thJA
R
thJA
R
thJS
R
thJS
K/W
Junction ambient, BAS 125-04W...06W
Junction - soldering point, BAS125W
Junction - soldering point, BAS125-04W...06W
1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm
Semiconductor Group
1
Dec-20-1996
BAS 125W
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
min.
DC characteristics
Reverse current
Values
typ.
max.
Unit
I
R
-
-
-
-
385
530
800
150
200
nA
V
R
= 20 V
V
R
= 25 V
Forward voltage
V
F
-
-
-
400
650
900
mV
I
F
= 1 mA
I
F
= 10 mA
I
F
= 35 mA
AC Characteristics
Diode capacitance
C
T
-
-
16
1.1
pF
Ω
-
-
V
R
= 0 V,
f
= 1 MHz
Differential forward resistance
R
F
I
F
= 5 mA,
f
= 10 kHz
Semiconductor Group
2
Dec-20-1996