TISP4360MMAJR datasheet, PDF - EEWORLD Datasheet

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TISP4360MMAJR: Description360V, 18A, SILICON SURGE PROTECTOR, DO-214AC, PLASTIC, SMA, 2 PIN; CategoryAnalog mixed-signal IC Trigger device; File Size515KB，21 Pages; ManufacturerJ.W. Miller ( Bourns )

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TISP4360MMAJR Overview

360V, 18A, SILICON SURGE PROTECTOR, DO-214AC, PLASTIC, SMA, 2 PIN

TISP4360MMAJR Parametric

Parameter Name	Attribute value
Maker	J.W. Miller ( Bourns )
Parts packaging code	DO-214AC
package instruction	SMALL OUTLINE, R-PDSO-C2
Contacts	2
Reach Compliance Code	unknow
Maximum breakover voltage	360 V
Configuration	SINGLE
Maximum off-state DC voltage	290 V
JEDEC-95 code	DO-214AC
JESD-30 code	R-PDSO-C2
On-state non-repetitive peak current	18 A
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
surface mount	YES
Terminal form	C BEND
Terminal location	DUAL
Trigger device type	SILICON SURGE PROTECTOR

TISP4360MMAJR Preview

TISP4300MMAJ, TISP4350MMAJ, TISP4360MMAJ

TISP4300MMBJ, TISP4350MMBJ, TISP4360MMBJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 2001 — REVISED APRIL 2002

ADSL AND POTS MODEM PROTECTION

Specified for:

— ITU-T Recommendation K.21

10/700

AC Induction and Contact

— FCC Part 68 (TIA/EIA-IS-968)

Type A & B surge

— UL 60950 and CSA 22.2 No. 60950

Clause 6. power cross

— Telcordia GR-1089-CORE

2/10 and 10/1000

AC Induction and Contact

Applications:

TISP4300MM for:

POTS Solid-State Relay Modems

Protection Voltage . . . . . . . . . . . . . 300 V

TISP4350MM for:

POTS Electro-mechanical Relay Modems

FCC Type B Ringer Voltage. . . . . . 275 V

TISP4360MM for:

ADSL Modems

ADSL + Type B Ringer Voltage . . . .290 V

Ion-Implanted Breakdown Region

Precise and Stable Voltage

DEVICE

‘4300

‘4350

‘4360

DRM

230

275

290

(BO)

300

350

360

SMA PACKAGE

(TOP VIEW)

R (B) 1

2 T (A)

MDXXCCA

SMB PACKAGE

(TOP VIEW)

R (B) 1

2 T (A)

MDXXBGH

device symbol

SD4XAA

erminals T and R correspond to the

alternative line designators of A and B

Rated for International Surge Wave Shapes

WAVE SHAPE

2/10 µs

10/160 µs

9/720 µs

10/700 µs

10/560 µs

10/1000 µs

STANDARD

GR-1089-CORE

FCC Part 68

ITU-T K.20/45/21

FCC Part 68

GR-1089-CORE

TSP

250

Available in SMA and SMB Packages

SMA Saves 25 % Placement Area Over SMB

FCC Part 68 Type A Surge Compliance by

Using Either a Fuse or 7

Ω

Resistor

description

These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by

a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A

single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication

equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can

be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

HOW TO ORDER

PACKAGE

CARRIER

ORDER #

SMA/DO-214AC J-Bend (AJ) Embossed Tape Reel Pack TISP43xxMMAJR

TISP43xxMM

SMB/DO-214AA J-Bend (BJ)

(R)

TISP43xxMMBJR

DEVICE

PRODUCT

INFORMATION

A Bourns Company

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

TISP4300MMAJ, TISP4350MMAJ, TISP4360MMAJ

TISP4300MMBJ, TISP4350MMBJ, TISP4360MMBJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 2001 — REVISED APRIL 2002

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially

clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to

crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the

overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup

as the diverted current subsides.

This TISP43xxMM range consists of three voltage variants targeted at specific applications: ADSL, electro-

mechanical hook switch and solid state hook switch modems. These parts are guaranteed to voltage limit and

withstand the listed international lightning surges in both polarities. Two packages are available; SMB

(JEDEC DO-214AA with J-bend leads) and SMA (JEDEC DO-214AC with J-bend leads). These devices are

supplied in embossed tape reel carrier pack. For alternative voltage and holding current values, consult the

factory.

absolute maximum ratings,

= 25 °C (unless otherwise noted)

RATING

Repetitive peak off-state voltage, (see Note 1)

Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)

2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)

10/160 µs (FCC Part 68 (TIA/EIA-IS-968), 10/160 µs voltage wave shape)

5/320 µs (FCC Part 68 (TIA/EIA-IS-968), 9/720 µs voltage wave shape)

5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/45/21)

10/560 µs (FCC Part 68 (TIA/EIA-IS-968), 10/560 µs voltage wave shape)

10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)

Non-repetitive peak on-state current (see Notes 2, 3 and 4)

20 ms (50 Hz) full sine wave

1 s (50 Hz) full sine wave

1000 s 50 Hz/60 Hz a.c.

Junction temperature

Storage temperature range

NOTES: 1.

‘4300

‘4350

‘4360

SYMBOL

DRM

VALUE

±230

±275

±290

250

1.6

-40 to +150

-65 to +150

UNIT

TSP

TSM

stg

°C

For voltage values at lower temperatures derate at 0.13 %/°C.

Initially the TISP43xxMM must be in thermal equilibrium with T

= 25 °C.

The surge may be repeated after the TISP43xxMM returns to its initial conditions.

EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring

track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C.

overload ratings,

= 25 °C (unless otherwise noted)

RATING

Peak overload on-state current, Type A impulse (see Note 5)

10/160 µs

10/560 µs

Peak overload on-state current, a.c. power cross tests UL 60950 (see Note 5)

SYMBOL

VALUE

200

100

See Figure 10

for current

versus time

UNIT

T(OV)M

NOTE

5: These electrical stress levels may damage the TISP43xxMM silicon chip. After test, the pass criterion is either that the device is

functional or, if it is faulty, that it has a short circuit fault mode. In the short circuit fault mode, the following equipment is protected

as the device is a permanent short across the line. The equipment would be unprotected if an open circuit fault mode developed.

PRODUCT

INFORMATION

TISP4300MMAJ, TISP4350MMAJ, TISP4360MMAJ

TISP4300MMBJ, TISP4350MMBJ, TISP4360MMBJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 2001 — REVISED APRIL 2002

recommended operating conditions

COMPONENT

series resistor for FCC Part 68, 10/160, 10/560 type A surge survival

series resistor for FCC Part 68, 9/720 type B surge survival

series resistor for GR-1089-CORE first-level and second-level surge survival

series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge survival

series resistor for K.21 coordination with a 400 V primary protector

MIN

6.6

TYP

MAX

UNIT

Ω

electrical characteristics for the T and R terminals, T

= 25 °C (unless otherwise noted)

DRM

PARAMETER

Repetitive peak off-

state current

Breakover voltage

Breakover current

Holding current

Critical rate of rise of

off-state voltage

Off-state current

Off-state capacitance

TEST CONDITIONS

= V

DRM

dv/dt = ±750 V/ms, R

SOURCE

= 300

Ω

dv/dt = ±750 V/ms, R

SOURCE

= 300

Ω

= ±5 A, di/dt = +/-30 mA/ms

Linear voltage ramp, Maximum ramp value < 0.85V

DRM

‘4300, V

= ±207 V

‘4350, V

= ±248 V

‘4360, V

= ±261 V

= ±50 V

f = 1 MHz, V

= 1 V rms, V

= ±1 V

f = 1 MHz, V

= 1 V rms, V

= ±50 V

= 25 °C

= 85 °C

‘4300

‘4350

‘4360

±0.15

±5

MIN

TYP

MAX

±5

±10

±300

±350

±360

±0.8

±0.6

UNIT

µA

(BO)

dv/dt

kV/µs

off

±2

±10

µA

thermal characteristics

PARAMETER

TEST CONDITIONS

EIA/JESD51-3 PCB, I

= I

TSM(1000)

= 25 °C, (see Note 6)

265 mm x 210 mm populated line card,

4-layer PCB, I

= I

TSM(1000)

, T

= 25 °C

MIN

TYP

MAX

125

°C/W

UNIT

Junction to free air thermal resistance

NOTE

6: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

PRODUCT

INFORMATION

TISP4300MMAJ, TISP4350MMAJ, TISP4360MMAJ

TISP4300MMBJ, TISP4350MMBJ, TISP4360MMBJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 2001 — REVISED APRIL 2002

PARAMETER MEASUREMENT INFORMATION

TSP

Quadrant I

Switching

Characteristic

TSM

(BO)

-v

DRM

(BO)

TSM

Quadrant III

Switching

Characteristic

TSP

-i

PMXXAAB

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS

ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL

PRODUCT

INFORMATION

TISP4300MMAJ, TISP4350MMAJ, TISP4360MMAJ

TISP4300MMBJ, TISP4350MMBJ, TISP4360MMBJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

NOVEMBER 2001 — REVISED APRIL 2002

TYPICAL CHARACTERISTICS

OFF-STATE CURRENT

JUNCTION TEMPERATURE

= ±50 V

Normalised Breakover Voltage

1.10

TC4LAG

1.15

NORMALISED BREAKOVER VOLTAGE

JUNCTION TEMPERATURE

TC4LAF

| - Off-State Current - µA

1.05

0·1

1.00

0·01

0.95

0·001

-25

100

125

- Junction Temperature - °C

150

0.90

-25

100

125

- Junction Temperature - °C

150

Figure 2.

ON-STATE CURRENT

ON-STATE VOLTAGE

1.5

0.7

0.5

0.7

0.4

1.5

4 5

- On-State Voltage - V

-25

= 25 °C

= 100 µs

Normalised Holding Current

Figure 3.

NORMALISED HOLDING CURRENT

JUNCTION TEMPERATURE

TC4LAD

TC4MAN

2.0

1.5

- On-State Current - A

1.0

0.9

0.8

0.7

0.6

0.5

100

- Junction Temperature - °C

125

150

Figure 4.

Figure 5.

PRODUCT

INFORMATION

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