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BAS20

Description
0.2 A, 150 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size61KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BAS20 Overview

0.2 A, 150 V, SILICON, SIGNAL DIODE

BAS20 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-609 codee3
Number of components1
Maximum operating temperature175 °C
Maximum output current0.2 A
Maximum repetitive peak reverse voltage150 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAS19; BAS20; BAS21
General purpose diodes
Product specification
Supersedes data of 1996 Sep 10
1999 May 26

BAS20 Related Products

BAS20 BAS19 BAS21
Description 0.2 A, 150 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE SIGNAL DIODE
Is it Rohs certified? conform to conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow unknow
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1.25 V 1 V
JESD-609 code e3 e3 e3
Number of components 1 1 1
Maximum operating temperature 175 °C 150 °C 175 °C
Maximum output current 0.2 A 0.2 A 0.2 A
Maximum repetitive peak reverse voltage 150 V 100 V 200 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs
surface mount YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
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