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BAS40-T1

Description
0.2 A, 40 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size73KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BAS40-T1 Overview

0.2 A, 40 V, SILICON, SIGNAL DIODE

BAS40-T1 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionGREEN, PLASTIC PACKAGE-3
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.2000 W
Diode typeSignal diode
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage40 V
Maximum average forward current0.2000 A
HiRel
Silicon Schottky Diode
Features
¥
¥
¥
¥
¥
¥
¥
HiRel
Discrete and Microwave Semiconductor
General-purpose diodes for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
Hermetically sealed microwave package
ESA Qualification pending
BAS 40
T1
ESD: E
lectro
s
tatic
d
ischarge sensitive device, observe handling precautions!
Type
BAS40-T1 (ql)
Marking
-
Ordering Code
see below
Pin Configuration
Package
T1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702A1176
H: High Rel Quality,
S: Space Quality,
Ordering Code: on request
Ordering Code: on request
(see
Chapter Order Instructions
for ordering example)
Table 1
Parameter
Reverse voltage
Forward current
Surge forward current
1)
Power dissipation
Operating temperature range
Storage temperature range
Soldering temperature
Junction temperature
Thermal resistance junction-case
1)
Maximum Ratings
Symbol
Limit Values
40
120
170
250
-
55 to + 150
-
65 to + 150
+ 250
150
100
Unit
V
mA
mA
mW
°
C
°
C
°
C
°
C
K/W
V
R
I
F
I
FSM
P
tot
T
op
T
stg
T
sol
T
j
R
th(j-c)
t
£
10 ms, duty cycle = 10
%
Semiconductor Group
1
Draft A03 1998-04-01

BAS40-T1 Related Products

BAS40-T1 Q62702A1176
Description 0.2 A, 40 V, SILICON, SIGNAL DIODE 0.2 A, 40 V, SILICON, SIGNAL DIODE
Number of terminals 3 3
Number of components 1 1
Processing package description GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3
state DISCONTINUED DISCONTINUED
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
Craftsmanship SCHOTTKY SCHOTTKY
structure single single
Diode component materials silicon silicon
Maximum power consumption limit 0.2000 W 0.2000 W
Diode type Signal diode Signal diode
Maximum reverse recovery time 0.0050 us 0.0050 us
Maximum repetitive peak reverse voltage 40 V 40 V
Maximum average forward current 0.2000 A 0.2000 A

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