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2EZ11D5

Description
Zener Diode, Case Style : DO-41; Pd (W) : 2; Vz (V) Min: -; Vz (V) Nom: 11; Vz (V) Max: -; Vz @lzt (mA): 45.5; Leakage Current IR (uA): 50; Leakage Current VR (V): 8.4
CategoryDiscrete semiconductor    Zener diode   
File Size1MB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

2EZ11D5 Overview

Zener Diode, Case Style : DO-41; Pd (W) : 2; Vz (V) Min: -; Vz (V) Nom: 11; Vz (V) Max: -; Vz @lzt (mA): 45.5; Leakage Current IR (uA): 50; Leakage Current VR (V): 8.4

2EZ11D5 Parametric

Parameter NameAttribute value
Parts packaging codeDO-41
Manufacturer packaging codeDO-41
2EZ Series
2W Silicon Zener Diodes
DO-41
Features
Complete Voltage Range 3.6 to 200 Volts
High peak reverse power dissipation
High reliability
Low leakage current
Mechanical Data
Case : DO-41 Molded plastic
Epoxy : UL94V-O rate flame retardant
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.35 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Rating
DC Power Dissipation at T
L
= 75
°C
(Note1)
Maximum Forward Voltage at I
F
= 200 mA
Maximum Thermal Resistance Junction to Ambient Air (Note2)
Junction Temperature Range
Storage Temperature Range
Note :
Symbol
P
D
V
F
RθJA
T
J
Ts
Value
2.0
1.2
60
- 55 to + 175
- 55 to + 175
Unit
Watts
Volts
K/W
°C
°C
(1) T
L
= Lead temperature at 3/8 " (9.5mm) from body
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
Fig. 1 POWER TEMPERATURE DERATING CURVE
P
D
, MAXIMUM DISSIPATION
(WATTS)
2.5
L = 3/8" (9.5mm)
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
150
175
T
L,
LEAD TEMPERATURE (
°
C)
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
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