DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAS55
High-speed diode
Product specification
Supersedes data of April 1996
File under Discrete Semiconductors, SC01
1996 Sep 10
Philips Semiconductors
Product specification
High-speed diode
FEATURES
•
Small plastic SMD package
•
High switching speed: max. 6 ns
•
Continuous reverse voltage:
max. 60 V
•
Repetitive peak reverse voltage:
max. 60 V
•
Repetitive peak forward current:
max. 600 mA.
APPLICATIONS
•
High-speed switching in surface
mounted circuits.
3
Marking code:
L5p.
BAS55
DESCRIPTION
The BAS55 is a high-speed switching
diode fabricated in planar technology,
and encapsulated in the small
rectangular plastic SMD SOT23
package.
PINNING
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
handbook, halfpage
2
1
2
n.c.
3
MAM185
1
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 100
µs
t = 10 ms
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
9
3
1.7
250
+150
150
A
A
A
mW
°C
°C
see Fig.2; note 1
CONDITIONS
MIN.
−
−
−
−
MAX.
60
60
250
600
V
V
mA
mA
UNIT
1996 Sep 10
2
Philips Semiconductors
Product specification
High-speed diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
CONDITIONS
see Fig.3; I
F
= 200 mA; DC value;
note 1
see Fig.5
V
R
= 60 V
V
R
= 60 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 400 mA to
I
R
= 400 mA; R
L
= 100
Ω;
measured at I
R
= 40 mA; see Fig.7
when switched to I
F
= 400 mA;
t
r
= 30 ns; see Fig.8
when switched to I
F
= 400 mA;
t
r
= 100 ns; see Fig.8
Note
−
−
−
−
100
100
2.5
6
MIN.
−
MAX.
1.0
BAS55
UNIT
V
nA
µA
pF
ns
V
fr
forward recovery voltage
−
−
2
1.5
V
V
1. T
amb
= 25
°C;
device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
330
500
UNIT
K/W
K/W
1996 Sep 10
3
Philips Semiconductors
Product specification
High-speed diode
GRAPHICAL DATA
BAS55
handbook, halfpage
300
MBG441
handbook, halfpage
300
MBH279
IF
(mA)
200
IF
(mA)
200
100
100
0
0
100
Tamb (
o
C)
200
0
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
T
j
= 25
°C.
Fig.2
Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3
Forward current as a function of forward
voltage; typical values.
10
2
handbook, full pagewidth
IFSM
(A)
MBG703
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 10
4
Analog electronics
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