BAS70-04 datasheet, PDF - EEWORLD Datasheet

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BAS70-04: Description0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size38KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BAS70-04 Overview

0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAS70-04 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SOT-23, 3 PIN
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.41 V
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.33 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	70 V
surface mount	YES
technology	SCHOTTKY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL

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SOT23 SILICON PLANAR DUAL

SCHOTTKY BARRIER DIODES

ISSUE 3 - JULY 1995

7

1

BAS70-04

BAS70-05

BAS70-06

1

.

1

3

2

3

2

3

2

3

SOT23

SERIES PAIR

Device Type: BAS70-04

Partmarking Detail: 2Z

Partmarking Detail: 2Z5

Device Type: BAS70-05

COMMON CATHODE

COMMON ANODE

Device Type: BAS70-06

Partmarking Detail: 1Z

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

P

tot

T

j

:T

stg

VALUE

330

-55 to +150

UNIT

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Breakdown Voltage

Reverse Leakage Current

Forward Voltage

Forward Current

Capacitance

Effective Minority Lifetime

(1)

(1) Sample Test

For typical characteristics graphs see ZC2800E datasheet.

SYMBOL

V

BR

I

R

V

F

I

F

C

T

τ

MIN.

70

MAX.

UNIT

V

200

410

15

2.0

100

nA

mV

mA

pF

ps

CONDITIONS.

I

R

=10

µ

A

V

R

=50V

I

F

=1mA

V

F

=1V

f=1MHz, V

R

=0

f=54MHz, I

pk

= 20mA

(Krakauer Test Method)

3-3

BAS70-04 Related Products

	BAS70-04	BAS70-05	BAS70-06
Description	0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	SOT-23, 3 PIN	SOT-23, 3 PIN	SOT-23, 3 PIN
Reach Compliance Code	unknow	unknow	unknown
ECCN code	EAR99	EAR99	EAR99
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.41 V	0.41 V	0.41 V
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0	e0
Humidity sensitivity level	1	1	1
Number of components	2	2	2
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	0.33 W	0.33 W	0.33 W
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	70 V	70 V	70 V
surface mount	YES	YES	YES
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL

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