1
TC4421
TC4422
9A HIGH-SPEED MOSFET DRIVERS
FEATURES
s
s
s
s
Tough CMOS
™
Construction
High Peak Output Current .................................. 9A
High Continuous Output Current ............... 2A Max
Fast Rise and Fall Times:
— 30 nsec with 4,700 pF Load
— 180 nsec with 47,000 pF Load
Short Internal Delays ............................ 30nsec Typ
Low Output Impedance ............................ 1.4W Typ
GENERAL DESCRIPTION
The TC4421/4422 are high current buffer/drivers
capable of driving large MOSFETs and IGBTs.
They are essentially immune to any form of upset
except direct overvoltage or over-dissipation — they can-
not be latched under any conditions within their power and
voltage ratings; they are not subject to damage or improper
operation when up to 5V of ground bounce is present on
their ground terminals; they can accept, without either
damage or logic upset, more than 1A inductive current of
either polarity being forced back into their outputs. In addi-
tion, all terminals are fully protected against up to 4 kV of
electrostatic discharge.
The TC4421/4422 inputs may be driven directly from
either TTL or CMOS (3V to 18V). In addition, 300 mV of
hysteresis is built into the input, providing noise immunity
and allowing the device to be driven from slowly rising or
falling waveforms.
2
s
s
3
APPLICATIONS
s
s
s
s
s
Line Drivers for Extra-Heavily-Loaded Lines
Pulse Generators
Driving the Largest MOSFETs and IGBTs
Local Power ON/OFF Switch
Motor and Solenoid Driver
4
PIN CONFIGURATIONS
5-Pin TO-220
8-Pin Plastic DIP/CerDIP
V
DD
1
8 V
DD
7 OUTPUT
ORDERING INFORMATION
Part No.
TC4421CAT
TC4421CPA
TC4421EPA
TC4421MJA
TC4422CAT
TC4422CPA
TC4422EPA
TC4422MJA
Package
5-Pin TO-220
8-Pin PDIP
8-Pin PDIP
8-Pin CerDIP
5-Pin TO-220
8-Pin PDIP
8-Pin PDIP
8-Pin CerDIP
Temperature Range
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 55°C to+125°C
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 55°C to+125°C
INPUT 2
TC4421
TC4422
Tab is
Common
to V
DD
INPUT
GND
V
DD
GND
OUTPUT
NC 3
GND 4
TC4421
TC4422
6 OUTPUT
5 GND
5
NOTE:
Duplicate pins must
both
be connected
for proper operation.
NC = No connection
6
FUNCTIONAL BLOCK DIAGRAM
INVERTING
V
DD
300 mV
OUTPUT
7
INPUT
4.7V
NONINVERTING
TC4421/TC4422
Inverting/Noninverting
GND
EFFECTIVE
INPUT C
25 pF
TC4421/2-7 -1018/96
8
4-231
TELCOM SEMICONDUCTOR, INC.
9A HIGH-SPEED MOSFET DRIVERS
TC4421
TC4422
ABSOLUTE MAXIMUM RATINGS*
Power Dissipation, T
A
≤
70°C
PDIP ..................................................................730W
CerDIP ............................................................800mW
5-Pin TO-220 ......................................................1.6W
Power Dissipation, T
A
≤
70°C
5-Pin TO-220 (With Heat Sink) .........................1.60W
Derating Factors (To Ambient)
PDIP ............................................................. 8mW/°C
CerDIP ....................................................... 6.4mW/°C
5-Pin TO-220 .............................................. 12mW/°C
Thermal Impedance (To Case)
5-Pin TO-220 R
QJ-C .....................................................
10°C/W
Storage Temperature ............................ – 65°C to +150°C
Operating Temperature (Chip) ................................ 150°C
Operating Temperature (Ambient)
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Lead Temperature (10 sec) ..................................... 300°C
Supply Voltage ............................................................20V
Input Voltage .......................... (V
DD
+ 0.3V) to (GND - 5V)
Input Current (V
IN
> V
DD
) ........................................ 50 mA
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS:
T
A
= 25°C with 4.5V
≤
V
DD
≤
18V unless otherwise specified.
Symbol
Input
V
IH
V
IL
I
IN
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
2.4
—
– 10
1.8
1.3
—
—
0.8
10
V
V
µA
Parameter
Test Conditions
Min
Typ
Max
Unit
0V
≤
V
IN
≤
V
DD
Output
V
OH
V
OL
R
O
R
O
I
PK
I
DC
I
REV
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
Latch-Up Protection
See Figure 1
See Figure 1
V
DD
= 18V, I
O
= 10 mA
V
DD
= 18V, I
O
= 10 mA
V
DD
= 18V
10V
≤
V
DD
≤
18V, T
C
= 25°
(TC4421/22 CAT only)
Duty Cycle
≤
2%
Withstand Reverse Current
V
DD
– 0.025
—
—
—
—
2
>1500
t
≤
300
µsec
—
—
1.4
0.9
9
—
0.025
—
1.7
—
V
V
Ω
Ω
A
A
mA
—
—
Switching Time
(Note 1)
t
R
t
F
t
D1
t
D2
Rise Time
Fall Time
Delay Time
Delay Time
Figure 1, C
L
= 10,000 pF
Figure 1, C
L
= 10,000 pF
Figure 1
Figure 1
—
—
—
—
60
60
30
33
75
75
60
60
nsec
nsec
nsec
nsec
Power Supply
I
S
V
DD
Power Supply Current
Operating Input Voltage
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
V
IN
= 3V
V
IN
= 0V
—
—
4.5
2.4
—
– 10
0.2
55
—
—
—
—
1.5
150
18
—
0.8
10
mA
µA
V
V
V
µA
Input
V
IH
V
IL
I
IN
4-232
0V
≤
V
IN
≤
V
DD
TELCOM SEMICONDUCTOR, INC.
9A HIGH-SPEED MOSFET DRIVERS
TC4421
TC4422
ELECTRICAL CHARACTERISTICS (cont.):
Symbol
Input
V
IH
V
IL
I
IN
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
Operating Input Voltage
2.4
—
– 10
V
DD
– 0.025
—
—
—
—
—
—
—
—
—
4.5
—
—
—
—
—
2.4
1.8
60
60
50
65
0.45
0.06
—
—
0.8
10
—
0.025
3.6
2.7
120
120
80
80
3
0.2
18
V
V
µA
V
V
W
W
nsec
nsec
nsec
nsec
mA
V
1
Measured over operating temperature range with 4.5V
≤
V
S
≤
18V unless otherwise specified.
Parameter
Test Conditions
Min
Typ
Max
Unit
2
0V
≤
V
IN
≤
V
DD
See Figure 1
See Figure 1
V
DD
= 18V, I
O
= 10 mA
V
DD
= 18V, I
O
= 10 mA
Figure 1, C
L
= 10,000 pF
Figure 1, C
L
= 10,000 pF
Figure 1
Figure 1
V
IN
= 3V
V
IN
= 0V
Output
V
OH
V
OL
R
O
R
O
t
R
t
F
t
D1
t
D2
3
Switching Time (Note 1)
4
Power Supply
I
S
V
DD
NOTE:
1. Switching times guaranteed by design.
5
0.1
µF
V
DD
= 18V
1
0.1
µF
2
8
0.1
µF
+5V
90%
INPUT
0V
INPUT
6
7
OUTPUT
6
t
R
10%
t
D1
t
F
t
D2
+18V
90%
90%
OUTPUT
C L = 10,000 pF
TC4421
4
5
0V
10%
10%
7
INPUT:
100 kHz, square wave,
t
RISE
= t
FALL
≤
10nsec
Figure 1. Switching Time Test Circuit
8
4-233
TELCOM SEMICONDUCTOR, INC.
9A HIGH SPEED MOSFET DRIVERS
TC4421
TC4422
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
220
200
180
180
160
Fall Time vs. Supply Voltage
tRISE (nsec)
160
140
120
100
80
60
40
20
0
4
6
tFALL (nsec)
22,000 pF
140
22,000 pF
120
100
80
60
4700 pF
10,000 pF
10,000 pF
4700 pF
1000 pF
40
20
1000 pF
0
8
10
V
DD
12
14
16
18
4
6
8
10
12
VDD
14
16
18
Rise TIme vs. Capacitive Load
300
5V
250
250
10V
300
Fall TIme vs. Capacitive Load
5V
10V
tFALL (nsec)
tRISE (nsec)
200
150
15V
100
50
0
100
200
150
15V
100
50
0
100
1000
10,000
CLOAD (pF)
100,000
1000
10,000
CLOAD (pF)
100,000
Rise and Fall Times vs. Temperature
90
80
70
60
Propagation Delay vs. Supply Voltage
50
C LOAD = 1000 pF
45
C
LOAD = 10,000 pF
VDD = 15V
TIME (nsec)
TIME (nsec)
40
t RISE
50
40
30
35
tD1
tD2
t FALL
30
–40
0
40
TA (°C)
80
120
25
4
6
8
10
12
VDD
14
16
18
4-234
TELCOM SEMICONDUCTOR, INC.
9A HIGH SPEED MOSFET DRIVERS
TC4421
TC4422
TYPICAL CHARACTERISTICS
(Cont.)
Supply Current vs. Capacitive Load
(V
DD
= 18V)
220
200
180
160
2 MHz
180
47,000 pF
160
140
10,000 pF
22,000 pF
1
Supply Current vs. Frequency
(V
DD
= 18V)
2
ISUPPLY (mA)
140
120
100
80
60
40
20
0
100
1000
10,000
CLOAD (pF)
100,000
632 kHz
200 kHz
20 kHz
1.125 MHz
63.2 kHz
ISUPPLY (mA)
120
100
80
60
40
20
0
10
100
FREQUENCY (kHz)
1000
470 pF
4700 pF
0.1 µF
3
Supply Current vs. Capacitive Load,
(V
DD
= 12)
180
160
140
180
160
140
Supply Current vs. Frequency
(V
DD
= 12)
22,000 pF
10,000 pF
47,000 pF
4
ISUPPLY (mA)
ISUPPLY (mA)
120
100
80
60
40
20
0
1.125 MHz
632 kHz
200 kHz
2 MHz
63.2 kHz
120
100
80
60
40
0.1 µF
4700 pF
5
470 pF
20 kHz
20
0
100
1000
10,000
CLOAD (pF)
100,000
10
100
FREQUENCY (kHz)
1000
6
Supply Current vs. Capacitive Load
(V
DD
= 6V)
100
90
80
70
200 kHz
100
120
Supply Current vs. Frequency
(V
DD
= 6V)
47,000 pF
22,000 pF
ISUPPLY (mA)
60
50
40
30
20
10
0
100
1000
10,000
CLOAD (pF)
20 kHz
2 MHz
632 kHz
63.2 kHz
ISUPPLY (mA)
80
4700 pF
60
40
0.1 µF
20
10,000 pF
7
470 pF
100,000
0
10
100
FREQUENCY (kHz)
1000
8
4-235
TELCOM SEMICONDUCTOR, INC.
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