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UT2005E3

Description
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, MINIATURE, GLASS, B, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size876KB,9 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

UT2005E3 Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, MINIATURE, GLASS, B, 2 PIN

UT2005E3 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionROHS COMPLIANT, HERMETIC SEALED, MINIATURE, GLASS, B, 2 PIN
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-LALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage50 V
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formWIRE
Terminal locationAXIAL

UT2005E3 Preview

UT2005 – UT2060, UT3005 – UT3060,
and UT4005 – UT4060
2 Amp To 4 Amp
Standard Recovery Rectifiers
Available
DESCRIPTION
High average power and surge capability make these series of devices attractive in many high-
reliability applications. All Microsemi rectifiers have a sleeve of pure hard glass fused to the silicon
junction. Since the silicon sees only this glass, electrical characteristics are permanently stable.
This voidless, monolithic package is totally unaffected by the most severe moisture or temperature
testing. Consult factory for surface mount option.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Miniature voidless hermetically sealed glass package.
Continuous current ratings up to 4 amps.
Extremely robust construction.
Internal
“Category 1”
metallurgical bonds.
RoHS compliant versions available.
APPLICATIONS / BENEFITS
Standard recovery 2 amp to 4 amp rectifier series with a V
RWM
range from 50 to 600 V.
Surge current rating to 100 amps.
Low thermal resistance.
Controlled avalanche breakdown with peak reverse power capability.
Inherently radiation hard as described in Microsemi
MicroNote 050.
“B” Package
MAXIMUM RATINGS
@ T
A
= 25
o
C unless otherwise specified
Parameters/Test Conditions
Junction Temperature
Storage Temperature
(1)
Thermal Resistance Junction-to-Lead
2 Amp 3 Amp 4 Amp
UT2005, UT3005, UT4005
UT2010, UT3010, UT4010
UT2020, UT3020, UT4020
UT2040, UT3040, UT4040
UT2060, UT3060, UT4060
Forward Surge Current (Peak)
2 Amp Series
3 Amp Series
@ 8.3 ms
4 Amp Series
Average Rectified Output Current
2 Amp Series
o
@ T
L
= +25 C
3 Amp Series
4 Amp Series
2 Amp Series
Average Rectified Output-Current
o
3 Amp Series
@ T
A
= +100 C
4 Amp Series
Solder Temperature @ 10 s
NOTE:
1. At 0.375 inch (9.53 mm) lead length from body.
Symbol
T
J
T
STG
R
ӨJL
V
RWM
Value
Unit
o
-65 to +175
C
o
-65 to +200
C
See
Derating Curves
50
100
200
400
600
60
80
100
2.0
3.0
4.0
1.0
1.5
2.0
260
V
Working Peak Reverse Voltage:
I
FSM
A
I
O1
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
I
O2
A
o
T
SP
C
T4-LDS-0280, Rev. 1 (121566)
©2012 Microsemi Corporation
Page 1 of 9
UT2005 – UT2060, UT3005 – UT3060,
and UT4005 – UT4060
MECHANICAL and PACKAGING
CASE: Hermetically sealed voidless hard glass with tungsten slugs.
TERMINALS: Tin/lead or RoHS compliant matte/tin over nickel plate over copper.
MARKING: Orange band indicates “UT”, part number printed on body.
POLARITY: Indicated by orange band.
TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
WEIGHT: 0.75 grams approximate.
See
Package Dimensions
on last page.
PART NOMENCLATURE
UT
Rectifier Series
Amp Rating
20 = 2 Amp
30 = 3 Amp
40 = 4 Amp
20
05
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
V
RWM
Rating
05 = 50 V
10 = 100 V
20 = 200 V
40 = 400 V
60 = 600 V
Symbol
I
F
I
FSM
I
O
T
J
V
F
V
RWM
SYMBOLS & DEFINITIONS
Definition
Forward Current: The forward current dc value, no alternating component.
Maximum Forward Surge Current: The forward current, surge peak or rated forward surge current.
Average Rectified Output Current: Output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and
a 180 degree conduction angle.
Junction Temperature: The temperature of a semiconductor junction.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
T4-LDS-0280, Rev. 1 (121566)
©2012 Microsemi Corporation
Page 2 of 9
UT2005 – UT2060, UT3005 – UT3060,
and UT4005 – UT4060
ELECTRICAL CHARACTERISTICS
@ 25
ºC
unless otherwise noted
WORKING PEAK
REVERSE
VOLTAGE
V
RWM
TYPE
UT4005
UT4010
UT4020
UT4040
UT4060
UT3005
UT3010
UT3020
UT3040
UT3060
UT2005
UT2010
UT2020
UT2040
UT2060
.
MAXIMUM
FORWARD
VOLTAGE DROP
Volts
MAXIMUM LEAKAGE
CURRENT
@ V
RWM
µA
25 C
o
Volts
50
100
200
400
600
50
100
200
400
600
50
100
200
400
600
125 C
o
1V@3A
5
100
1V@2A
5
100
1V@1A
5
100
T4-LDS-0280, Rev. 1 (121566)
©2012 Microsemi Corporation
Page 3 of 9
UT2005 – UT2060, UT3005 – UT3060,
and UT4005 – UT4060
GRAPHS
I
O
AVERAGE RECTIFIED CURRENT (A)
T
L
– LEAD TEMPERATURE (°C)
FIGURE 1
Maximum Current vs Lead Temperature
I
O
AVERAGE RECTIFIED CURRENT (A)
T
L
– LEAD TEMPERATURE (°C)
FIGURE 2
Maximum Current vs Lead Temperature
T4-LDS-0280, Rev. 1 (121566)
©2012 Microsemi Corporation
Page 4 of 9
POWER (W) @ T
J
= 175 °C
POWER (W) @ T
J
= 175 °C
UT2005 – UT2060, UT3005 – UT3060,
and UT4005 – UT4060
GRAPHS
I
O
AVERAGE RECTIFIED CURRENT (A)
T
L
– LEAD TEMPERATURE (°C)
FIGURE 3
Maximum Current vs Lead Temperature
PULSE CURRENT (A)
PULSE DURATION (SECONDS)
FIGURE 4
Forward Pulse Current vs Pulse Duration
T4-LDS-0280, Rev. 1 (121566)
©2012 Microsemi Corporation
POWER (W) @ T
J
= 175 °C
Page 5 of 9
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