EMB3 / UMB3N / IMB3A
PNP -100mA -50V Complex Digital Transistors
(Bias Resistor Built-in Transistors)
Datasheet
lOutline
Parameter
Tr1 and Tr2
EMT6
(6)
(1)
(5)
(4)
UMT6
I
C(MAX.)
R
1
V
CEO
-50V
-100mA
4.7kW
SMT6
(6)
(1)
(5)
(4)
(2)
(3)
(2)
(3)
EMB3
(SC-107C)
(4)
(5)
UMB3N
SOT-353 (SC-88)
lFeatures
1) Built-In Biasing Resistors.
2) Two DTA143T chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
(3)
(2)
(1)
(6)
IMB3A
SOT-457 (SC-74)
lInner
circuit
EMB3 / UMB3N
Collector
(6)
Base
(5)
Emitter
(4)
Collector
(4)
IMB3A
Base
(5)
Emitter
(6)
lApplication
Inverter circuit, Interface circuit, Driver circuit
(1)
Emitter
(2)
Base
(3)
Collector
(3)
Emitter
(2)
Base
(1)
Collector
lPackaging
specifications
Part No.
EMB3
UMB3N
IMB3A
Package
EMT6
UMT6
SMT6
Package
size
(mm)
1616
2021
2928
Taping
code
T2R
TR
T108
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
180
180
180
8
8
8
8,000
3,000
3,000
Marking
B3
B3
B3
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© 2012 ROHM Co., Ltd. All rights reserved.
1/6
2012.06 - Rev.C
EMB3 / UMB3N / IMB3A
lAbsolute
maximum ratings
(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
EMB3 / UMB3N
IMB3A
Junction temperature
Range of storage temperature
lElectrical
characteristics(Ta
= 25°C)
<For Tr1 and Tr2 in common>
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Data Sheet
Symbol
V
CBO
V
CEO
V
EBO
I
C(MAX.)*1
P
D
*2
Values
-50
-50
-5
-100
150 (Total)
*3
300 (Total)
*4
150
-55
to
+150
Unit
V
V
V
mA
mW
mW
°C
°C
T
j
T
stg
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T *1
Conditions
I
C
=
-50mA
I
C
=
-1mA
I
E
=
-50mA
V
CB
=
-50V
V
EB
=
-4V
I
C
/ I
B
=
-5mA
/
-0.25mA
Min.
-50
-50
-5
-
-
-
100
3.29
-
Typ.
-
-
-
-
-
-
250
4.7
250
Max.
-
-
-
-0.5
-0.5
-0.3
600
6.11
-
Unit
V
V
V
mA
mA
V
-
kW
MHz
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
Transition frequency
V
CE
=
-5V
, I
C
=
-1mA
,
-
V
CE
=
-10V,
I
E
= 5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
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© 2012 ROHM Co., Ltd. All rights reserved.
2/6
2012.06 - Rev.C
EMB3 / UMB3N / IMB3A
lElectrical
characteristic curves(Ta
= 25°C)
Data Sheet
-10
Fig.1 Grounded emitter propagation
characteristics
V
CE
=
-5V
-100
Fig.2 Grounded emitter output
characteristics
Ta=25ºC
I
B
=
-500μA
-450μA
-400μA
-350μA
-300μA
-250μA
COLLECTOR CURRENT : Ic (mA)
COLLECTOR CURRENT : I
C
(mA)
-1
-80
-60
-0.1
Ta=100ºC
25ºC
-40ºC
-40
-200μA
-150μA
-100μA
-50μA
-0.01
-20
-0.001
0
-0.5
-1
-1.5
-2
0
0
-2
-4
-6
-8
-10
0A
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER
VOLTAGE : V
CE
(V)
Fig.3 DC Current gain
vs. Collector Current
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat) (V)
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
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© 2012 ROHM Co., Ltd. All rights reserved.
3/6
2012.06 - Rev.C
EMB3 / UMB3N / IMB3A
lDimensions
(Unit : mm)
D
b
x
S A
L
Data Sheet
EMT6
A
c
Lp
H
E
Lp
e
L
E
A
A1
y S
S
l1
b2
e
Patterm of terminal position areas
DIM
A1
A
b
c
D
E
e
H
E
L
Lp
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
0.00
0.10
0.45
0.55
0.17
0.27
0.08
0.18
1.50
1.70
1.10
1.30
0.50
1.50
1.70
0.10
0.30
-
0.35
-
0.10
-
0.10
MILIMETERS
MIN
MAX
1.25
-
0.37
-
0.45
INCHES
MIN
0
0.018
0.007
0.003
0.059
0.043
0.02
0.059
0.004
-
-
-
INCHES
MIN
0.049
-
-
0.015
0.018
MAX
0.067
0.012
0.014
0.004
0.004
MAX
0.004
0.022
0.011
0.007
0.067
0.051
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
4/6
2012.06 - Rev.C
e1
EMB3 / UMB3N / IMB3A
lDimensions
(Unit : mm)
Data Sheet
UMT6
D
e
A
Q
c
H
E
L1
b
x
S A
A3
e
A
A1
y S
S
b2
Patterm of terminal position areas
DIM
A
A1
A3
b
c
D
E
e
H
E
L1
Lp
Q
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
0.80
1.00
0.00
0.10
0.25
0.15
0.30
0.10
0.20
1.90
2.10
1.15
1.35
0.65
2.00
2.20
0.20
0.50
0.25
0.55
0.10
0.30
-
0.10
-
0.10
MILIMETERS
MIN
MAX
1.55
-
0.40
-
0.65
INCHES
MIN
-
0
0.01
0.006
0.004
0.075
0.045
0.03
0.079
0.008
0.01
0.004
-
-
INCHES
MIN
0.06
-
-
0.016
0.026
MAX
0.087
0.02
0.022
0.012
0.004
0.004
0.012
0.008
0.083
0.053
MAX
0.039
0.004
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
5/6
l1
e1
2012.06 - Rev.C
Lp
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