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BAT17-06W

Description
SILICON, VHF-UHF BAND, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size37KB,3 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BAT17-06W Overview

SILICON, VHF-UHF BAND, MIXER DIODE

BAT17-06W Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionR-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage4 V
ConfigurationCOMMON ANODE, 2 ELEMENTS
Maximum diode capacitance0.75 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.6 V
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current130 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.15 W
Certification statusNot Qualified
Maximum reverse current10 µA
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
BAT 17W
Silicon Schottky Diodes
For mixer applications in the VHF / UHF range
For high-speed switching applications
3
2
1
BAT 17W
BAT 17-04W
BAT 17-05W
BAT 17-06W
VSO05561
Type
BAT 17W
BAT 17-04W
BAT 17-05W
BAT 17-06W
Marking Ordering Code
53s
54s
55s
56s
Q62702-A1271
Q62702-A1272
Q62702-A1273
Q62702-A1274
Pin Configuration
1=A
1 = A1
1 = A1
3 = C1
2 n.c.
2 = C2
2 = A2
2 = C2
3=C
3 = C1/A2
3 = C1/2
3 = A1/2
Package
SOT-323
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Symbol
Value
4
130
150
150
150
- 55 ...+150
- 55 ...+150
435
550
355
390
°C
Unit
V
mA
mW
V
R
I
F
Total power dissipation 1) BAT 17W ,
T
A
97 °C
P
tot
BAT 17-04W, -05W, -06W
,
T
S
92 °C
tot
P
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Junction - ambient
1)
BAT 17W
Junction - ambient
1)
BAS 17-04W ...
Junction - soldering point BAT 17W
Junction - soldering point BAT 17-04W ...
T
j
T
op
T
stg
R
thJA
R
thJA
R
thJS
R
thJS
K/W
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm)
Semiconductor Group
Semiconductor Group
1
1
Sep-04-1998
1998-11-01

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