BAT 18
Silicon RF Switching Diode
q
Low-loss VHF/UHF switch above 10 MHz
q
Pin diode with low forward resistance
BAT 18 …
Type
BAT 18
BAT 18-04
Marking
A2
AU
Ordering Code Pin Configuration
Q62702-A787
Q62702-A938
Package
1)
SOT 23
BAT 18-05
AS
Q62702-A940
BAT 18-06
AT
Q62702-A942
Maximum Ratings per Diode
Parameter
Reverse voltage
Forward current
Operating and
storage temperature range
Thermal Resistance
Junction - ambient
R
th JA
≤
450
Symbol
V
R
I
F
T
op
T
stg
Values
35
100
Unit
V
mA
– 55 … + 150 ˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm
×
16.7 mm
×
0.7 mm.
Semiconductor Group
1
07.94
BAT 18...
Electrical Characteristics per Diode
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Forward voltage
I
F
= 100 mA
Reverse current
V
R
= 20 V
V
R
= 20 V,
T
A
= 60 ˚C
Diode capacitance
,
V
R
= 20
V f
= 1 MHz
Forward resistance
I
F
= 5 mA,
f
= 100 MHz
Series inductance
Symbol
min.
V
F
I
R
–
–
C
T
r
f
L
S
–
–
–
–
–
0.75
0.4
2
20
200
1
0.7
–
pF
Ω
nH
–
Values
typ.
0.38
max.
1.2
V
nA
Unit
Diode capacitance
C
T
=
f
(V
R
)
f
= 1 MHz
Forward resistance
r
f
=
f
(I
F
)
f
= 100 MHz
Semiconductor Group
2
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