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ZS1033

Description
Trans Voltage Suppressor Diode, 2000W, Bidirectional, 1 Element, Silicon
CategoryDiscrete semiconductor    diode   
File Size36KB,1 Pages
ManufacturerSemitec
Environmental Compliance
Download Datasheet Parametric Compare View All

ZS1033 Overview

Trans Voltage Suppressor Diode, 2000W, Bidirectional, 1 Element, Silicon

ZS1033 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSemitec
package instructionR-PDSO-C2
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum breakdown voltage36.3 V
Minimum breakdown voltage29.7 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation2000 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
SMD VRD
Part number
Dimensions
Marking
Symbol Mark
1.5 0.2
2.5 0.2
Symbol Mark
Symbol Mark
S Mark
S Mark
ZS 1 033 D - T
Taping
Nil
:
Bi-Polar
U
:
Uni-Polar
D
:
High-Reverse voltage type
Break down voltage
Steady state power
SMD type
1.2 0.2
0.1 max.
4.3 0.2
2.0 0.3
012
5AA
ZS type
Part No.
Lot No.
012
5AA
ZS-U type
Part No.
Lot No.
012
5AA
ZS-D type
S Mark
Cathode
Mark
Part No.
Lot No.
4.7 0.3
1.2 0.2
0.2
Unit(mm)
Taping
Maximum Rating
career tape
Dimension of reel
Steady state power
dissipation
T
1
1.0W
A
B
D
0
cover tape
E
E
C
300W(10/1000 s)
Peak pulse power
1200W(1.2/50 s)
2000W(8/20 s)
Storage temp. range
40 150 C
T
2
F
W
r
D
D
1
P
1
P
2
P
0
A
W W
1
Minimum quantity
:
1500 / reel
A
3.0
0.1
B
W
F
E
P
1
4.0
0.1
P
2
2.0
0.1
P
0
4.0
0.1
D
0
1.5
0.1
0
D
1
1.5
0.2
0
T
1
T
2
A
178
2.0
B
80
1.0
C
13
0.5
D
21
0.8
E
2.0
0.5
W
14.0
1.5
W
1
1.5
0.5
1.0
5.2 12.0
0.1
0.3
5.5
1.75
0.05
0.1
0.3
(2.6)
0.05
Unit (mm)
(1.0)
Unit (mm)
Specifications
ZS type
Breakdown
voltage
Part No.
V
B
It 1mA
V
12(10.8 13.2)
15(13.5 16.5)
18(16.2 19.8)
22(19.8 24.2)
27(24.3 29.7)
33(29.7 36.3)
39(35.1 42.9)
47(42.3 51.7)
Stand-off
voltage
V
S
D.C.
V
9.72
12.1
14.5
17.8
21.8
26.8
31.6
38.1
Maximum
leakage
current
I
L
max
V
S
A
10
5
5
5
5
5
5
5
Maximum clamping voltage &
Maximum peak pulse current
V
C
max/I
pp
10/1000 s
V
17.3
22.0
26.5
31.9
39.1
47.7
56.4
67.8
A
17.3
13.6
11.3
9.40
7.67
6.29
5.32
4.42
V
22.4
28.5
34.4
41.4
50.7
61.8
73.1
88.0
8/20 s
A
89.3
70.2
58.1
48.3
39.4
32.4
27.4
22.7
25 C 50 C
%/ C
0.066
0.075
0.079
0.082
0.085
0.087
0.090
0.092
Temperature
coefficient
Capacitance
(TYP)
C
pF
551
465
376
299
248
198
164
137
ZS1012
ZS1015
ZS1018
ZS1022
ZS1027
ZS1033
ZS1039
ZS1047
ZS-U type
Breakdown
voltage
Part No.
V
B
It 1mA
V
12(10.8 13.2)
15(13.5 16.5)
18(16.2 19.8)
22(19.8 24.2)
27(24.3 29.7)
33(29.7 36.3)
39(35.1 42.9)
47(42.3 51.7)
Stand-off
voltage
V
S
D.C.
V
9.72
12.1
14.5
17.8
21.8
26.8
31.6
38.1
Maximum
leakage
current
I
L
max
V
S
A
10
5
5
5
5
5
5
5
Maximum clamping voltage &
Maximum peak pulse current
V
C
max/I
pp
10/1000 s
V
17.3
22.0
26.5
31.9
39.1
47.7
56.4
67.8
A
17.3
13.6
11.3
9.40
7.67
6.29
5.32
4.42
V
22.4
28.5
34.4
41.4
50.7
61.8
73.1
88.0
8/20 s
A
89.3
70.2
58.1
48.3
39.4
32.4
27.4
22.7
25 C 50 C
%/ C
0.066
0.075
0.079
0.082
0.085
0.087
0.090
0.092
Temperature
coefficient
Capacitance
(TYP)
C
pF
1,102
929
751
598
497
395
328
274
ZS1012U
ZS1015U
ZS1018U
ZS1022U
ZS1027U
ZS1033U
ZS1039U
ZS1047U
ZS-D type
Breakdown
voltage
Part No.
V
B
It 1mA
V
12(10.8 13.2)
15(13.5 16.5)
18(16.2 19.8)
22(19.8 24.2)
27(24.3 29.7)
33(29.7 36.3)
39(35.1 42.9)
47(42.3 51.7)
Stand-off
voltage
V
S
D.C.
V
9.72
12.1
14.5
17.8
21.8
26.8
31.6
38.1
Maximum
leakage
current
I
L
max
V
S
A
10
5
5
5
5
5
5
5
Maximum clamping voltage &
Maximum peak pulse current
V
C
max/I
pp
10/1000 s
V
17.3
22.0
26.5
31.9
39.1
47.7
56.4
67.8
A
17.3
13.6
11.3
9.40
7.67
6.29
5.32
4.42
V
22.4
28.5
34.4
41.4
50.7
61.8
73.1
88.0
8/20 s
A
89.3
70.2
58.1
48.3
39.4
32.4
27.4
22.7
25 C 50 C
%/ C
0.066
0.075
0.079
0.082
0.085
0.087
0.090
0.092
Temperature
coefficient
Capacitance
(TYP)
C
pF
30.2
29.1
28.2
27.3
26.4
25.5
24.8
24.0
ZS1012D
ZS1015D
ZS1018D
ZS1022D
ZS1027D
ZS1033D
ZS1039D
ZS1047D
B
r
27

ZS1033 Related Products

ZS1033 ZS1012 ZS1015
Description Trans Voltage Suppressor Diode, 2000W, Bidirectional, 1 Element, Silicon Trans Voltage Suppressor Diode, 2000W, Bidirectional, 1 Element, Silicon Trans Voltage Suppressor Diode, 2000W, Bidirectional, 1 Element, Silicon
Maker Semitec Semitec Semitec
package instruction R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknow unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum breakdown voltage 36.3 V 13.2 V 16.5 V
Minimum breakdown voltage 29.7 V 10.8 V 13.5 V
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Maximum non-repetitive peak reverse power dissipation 2000 W 2000 W 2000 W
Number of components 1 1 1
Number of terminals 2 2 2
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
polarity BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL
Maximum power dissipation 1 W 1 W 1 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE
Terminal form C BEND C BEND C BEND
Terminal location DUAL DUAL DUAL
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