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SDR508TX

Description
Rectifier Diode, 1 Phase, 1 Element, 50A, 800V V(RRM), Silicon, DO-5,
CategoryDiscrete semiconductor    diode   
File Size96KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SDR508TX Overview

Rectifier Diode, 1 Phase, 1 Element, 50A, 800V V(RRM), Silicon, DO-5,

SDR508TX Parametric

Parameter NameAttribute value
MakerSSDI
Reach Compliance Codecompli
ECCN codeEAR99
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JEDEC-95 codeDO-5
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current625 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current50 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
GuidelineMIL-19500
Maximum repetitive peak reverse voltage800 V
Maximum reverse current25 µA
Maximum reverse recovery time0.08 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
SDR504
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Thru
SDR510
50 Amp
400-1000 Volt
80 nsec
ULTRA FAST RECOVERY
RECTIFIER
Features
:
Ultra fast recovery: 80 nsec maximum
Low reverse leakage current
Low thermal resistance
High surge capability
Hermetically sealed
For high efficiency applications
PIV to 1000V
TX, TXV, and S-Level Screening Available
2/
Part Number/Ordering Information
1/
SDR5
__ __
__
│ │
Screening
2/
__
= Not Screened
│ │
TX = TX Level
│ │
TXV = TXV Level
│ │
S = S Level
│ │
│ └
Pin Configuration
(See Table 1)
__ = Normal (Cathode to Stud)
R = Reverse (Anode to Stud)
Family/Voltage
04 = 400V
06 = 600V
08 = 800V
10 = 1000V
Designer’s Data Sheet
Maximum Ratings
Peak Repetitive Reverse and DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25 °C)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
= 25 °C)
Operating & Storage Temperature
Maximum Total Thermal Resistance
Junction to Case
SDR504
SDR506
SDR508
SDR510
Symbol
V
RRM
V
RWM
V
R
I
O
I
FSM
T
OP
& T
STG
R
JC
Value
400
600
800
1000
50
625
-65 to +175
1.0
Units
Volts
Amps
Amps
ºC
ºC/W
Notes:
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
DO-5:
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0049B
DOC
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