BAT54_D87Z datasheet, PDF - EEWORLD Datasheet

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BAT54_D87Z: Description0.2 A, 30 V, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size107KB，3 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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BAT54_D87Z Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE

BAT54_D87Z Parametric

Parameter Name	Attribute value
Brand Name	Fairchild Semiconduc
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Fairchild
Parts packaging code	SOT-23
package instruction	R-PDSO-G3
Contacts	3
Manufacturer packaging code	3LD, SOT23, JEDEC TO-236, LOW PROFILE
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.24 V
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	0.6 A
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.29 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	30 V
Maximum reverse recovery time	0.005 µs
surface mount	YES
technology	SCHOTTKY
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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BAT54/A/C/S Schottky Diodes

February 2005

BAT54/A/C/S

Schottky Diodes

Connection Diagram

BAT54

BAT54A

L4P

BAT54C

2NC

BAT54S

SOT-23

MARKING

BAT54 = L4P BAT54A = L42

BAT54C = L43 BAT54S = L44

Absolute Maximum Ratings *

Symbol

RRM

F(AV)

FSM

STG

= 25°C unless otherwise noted

Parameter

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Storage Temperature Range

Operating Junction Temperature

Value

200

600

-55 to +150

Unit

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

Symbol

θJA

Power Dissipation

Thermal Resistance, Junction to Ambient

= 25°C unless otherwise noted

Parameter

Value

290

430

Unit

°C/W

Electrical Characteristics

Symbol

Parameter

Breakdown Voltage

Forward Voltage

= 10µA

= 0.1mA

= 1mA

= 10mA

= 30mA

= 100mA

= 25V

Conditions

Min.

Max.

240

320

400

500

0.8

5.0

Units

µA

Reverse Leakage

Total Capacitance

Reverse Recovery Time

= 1V, f = 1.0MHz

= I

= 10mA, I

= 1.0mA,

= 100Ω

www.fairchildsemi.com

BAT54/A/C/S Rev. E1

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