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BAT60

Description
3 A, 10 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size232KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BAT60 Overview

3 A, 10 V, SILICON, RECTIFIER DIODE

BAT60 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, surface mount, 2PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.3100 W
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage10 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current5 A
®
BAT60J
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
s
s
s
s
s
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
EXTREMELY FAST SWITCHING
SURFACE MOUNTED DEVICE
A
60
K
DESCRIPTION
Schottky barrier diode encapsulated in a SOD-323
small SMD package.
This device is intended for use in portable
equipments. It is suited for DC to DC converters,
step-up conversion and power management.
SOD-323
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F
I
FSM
P
tot
T
stg
Tj
TL
* :
Parameter
Repetitive peak reverse voltage
Peak forward current
Surge non repetitive forward current
Power Dissipation
Storage temperature range
Maximum operating junction temperature *
Maximum temperature for soldering during 10s
δ
= 0.11
tp=10ms
Ta=25°C
Value
10
3
5
310
- 65 to +150
150
260
Unit
V
A
A
mW
°C
°C
°C
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth
(
j
a
)
THERMAL RESISTANCE
Symbol
R
th (j-a)
Junction to ambient (*)
Parameter
Value
400
Unit
°C/W
(*) Mounted on epoxy board with recommended pad layout.
January 2003 - Ed: 6A
1/5

BAT60 Related Products

BAT60 BAT60J
Description 3 A, 10 V, SILICON, RECTIFIER DIODE 3 A, 10 V, SILICON, RECTIFIER DIODE
Number of terminals 2 2
Number of components 1 1
surface mount Yes YES
Terminal form GULL WING GULL WING
Terminal location pair DUAL
Diode component materials silicon SILICON
Diode type rectifier diode RECTIFIER DIODE
application GENERAL PURPOSE GENERAL PURPOSE
Phase 1 1
Maximum repetitive peak reverse voltage 10 V 10 V
Maximum non-repetitive peak forward current 5 A 5 A

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