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BAT64-04

Description
0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size93KB,3 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BAT64-04 Overview

0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAT64-04 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionR-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.75 V
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak forward current0.8 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.12 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum reverse current2 µA
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
BAT 64
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
Pin Configuration
BAT 64-04
BAT64-05
BAT64-06
ESD: ElectroStatic Discharge
sensitive device, observe handling precautions!
Type
Marking Ordering Code
Pin Configuration
BAT 64
BAT 64-04
BAT 64-05
BAT 64-06
63s
64s
65s
66s
Q62702-A879
Q62702-A961
Q62702-A962
Q62702-A963
1=A
1=A
1=A
1=C
2=C
2=A
2=C
3=C
3 = C/A
3 = C/C
3 = A/A
Package
SOT-23
SOT-23
SOT-23
SOT-23
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Symbol
Values
40
250
120
800
mW
250
150
- 55 ... + 150
495
355
°C
Unit
V
mA
V
R
I
F
Average forward current (50/60Hz, sinus)
I
FAV
Surge forward current (t
≤ 10ms)
I
FSM
Total Power dissipation
P
tot
T
j
T
stg
R
thJA
R
thJS
T
S
= 61 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient
1)
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group
1
Jan-31-1997

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