BAT 68W
Silicon Schottky Diodes
Preliminary data
• For mixer applications in the VHF/UHF range
• For high speed switching
BAT 68-04W
BAT68-05W
BAT68-06W
Type
BAT 68-04W
BAT 68-05W
BAT 68-06W
BAT 68W
Marking Ordering Code
84s
85s
86s
83s
Q62702-
Q62702-
Q62702-
Q62702-
Pin Configuration
1 = A1
1 = A1
1 = K1
1=A
2 = K2
2 = A2
2 = K2
n.c.
Package
3 = K1/A2 SOT-323
3 = K1/K2 SOT-323
3 = A1/A2 SOT-323
3=K
SOT-323
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation, BAT68W
Symbol
Values
8
130
150
150
150
- 65 ... + 150
- 65 ... + 150
≤
435
≤
550
≤
355
390
K/W
°C
Unit
V
mA
mW
V
R
I
F
T
S
=97°C
P
tot
Total power dissipation, BAW68-04...06W
T
S
=92°C
P
tot
Junction temperature
T
j
Operating temperature range
Storage temperature
Thermal Resistance
Junction - ambient, BAT68W
Junction - ambient, BAT68-04W...06W
Junctui - soldering point, BAT68W
Junction - soldering point, BAT68-04W...06W
T
op
T
stg
R
thJA
R
thJA
R
thJS
R
thJS
Semiconductor Group
1
Dec-20-1996
BAT 68W
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
min.
DC characteristics
Breakdown voltage
Values
typ.
max.
Unit
V
(BR)
8
-
-
-
318
390
-
-
-
V
µA
-
-
0.1
1.2
mV
-
340
340
500
pF
-
1
Ω
-
10
I
(BR)
= 100 µA
Reverse current
I
R
V
R
= 1 V,
T
A
= 25 °C
V
R
= 1 V,
T
A
= 60 °C
Forward voltage
V
F
I
F
= 1 mA
I
F
= 10 mA
Diode capacitance
C
T
R
F
V
R
= 1 V,
f
= 1 MHz
Differential forward resistance
I
F
= 5 mA
Forward current
I
F
=
f
(T
A
*;T
S
)
BAT 68W
200
mA
Forward current
I
F
=
f
(T
A
*;T
S
)
BAT 68-04W, -05W, -06W
200
mA
*): mounted on alumina 15mm x 16.7mm x 0.7mm *): mounted on alumina 15mm x 16.7mm x 0.7mm
I
F
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120 °C 150
T
A
,T
S
I
F
160
140
T
S
T
A
120
100
80
60
40
20
0
0
20
40
60
80
100
120 °C 150
T
A
,T
S
T
A
T
S
Semiconductor Group
2
Dec-20-1996
Embedded System
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