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BAT720

Description
Schottky barrier diode
CategoryDiscrete semiconductor    diode   
File Size45KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

BAT720 Overview

Schottky barrier diode

BAT720 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JESD-609 codee3
Maximum non-repetitive peak forward current2 A
Number of components1
Maximum operating temperature125 °C
Maximum output current0.5 A
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn)
SBD
Type :
EA20QC06
EA20QC06
OUTLINE DRAWING
FEATURES
* TO-251AA Case
* Dual Diodes Cathode Common
* Low Forward Voltage drop
* Low Power Loss
* High Surge Capability
* 40 Volts thru 100 Volts Types Available
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
P.C.Board
Average Rectified
mounted *
Output Current
-
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
V
RRM
V
RSM
I
O
I
F(RMS)
I
FSM
Tjw
Tstg
20
1.4
2
Ta=28°C
Tc=135°C
Approx Net Weight:0.35g
EA20QC06
60
65
50Hz Full Sine Wave
Resistive Load
Unit
V
V
A
A
A
°C
°C
2.22
50Hz Full Sine Wave,1cycle,
Non-repetitive
- 40 to + 150
- 40 to + 150
Electrical
Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Junction to Ambient
Thermal
Resistance
Junction to Case
* Print Land = 20x20 mm
Symbol
Conditions
Min Typ Max
-
-
-
-
-
-
-
-
1.0
0.58
80
6
Unit
mA
V
°C/W
°C/W
I
RM
Tj=25°C,V
RM
=V
RRM
per Arm
V
FM
Tj=25°C,I
FM
= 1 A per Arm
Rth(j-a) P.C.Board mounted *
Rth(j-c)
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