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BAW78C

Description
1 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size86KB,3 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BAW78C Overview

1 A, SILICON, SIGNAL DIODE

BAW78C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSIEMENS
package instructionR-PSSO-F3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2 V
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Maximum non-repetitive peak forward current10 A
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current1 µA
Maximum reverse recovery time1 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationSINGLE
Base Number Matches1
Silicon Switching Diodes
BAW 78 A
… BAW 78 D
q
Switching applications
q
High breakdown voltage
Type
BAW 78 A
BAW 78 B
BAW 78 C
BAW 78 D
Marking
GA
GB
GC
GD
Ordering Code
(tape and reel)
Q62702-A778
Q62702-A779
Q62702-A784
Q62702-A109
Pin Configuration
Package
1)
SOT-89
Maximum Ratings
Parameter
Reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Surge forward current
t
= 1
µ
s
Total power dissipation
T
S
= 125 ˚C
Junction temperature
Symbol
V
R
V
RM
I
F
I
FM
I
FS
P
tot
T
j
Values
Unit
BAW 78 A BAW 78 B BAW 78 C BAW 78 D
50
50
100
100
1
1
10
1
150
– 65 … + 150
W
˚C
200
200
400
400
A
V
Storage temperature range
T
stg
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
95
25
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
01.97

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