EM640FP16 Series
Low Power, 256Kx16 SRAM
Document Title
256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
0.2
History
Initial Draft
2’nd Draft
3’rd Draft
Changed Icc, Icc1 value
Changed I
SB1
test conditions,
Changed VDR & IDR
measurement condition
Draft Date
October 24 , 2002
November 11 , 2002
December 23 , 2002
Remark
Preliminary
0.3
0.4
4’th Draft
5’th Draft
Add Pb-free part number
EM640FP16:
Changed Icc2 value
Changed Package Dimension
February 13 , 2004
April 11 , 2006
Emerging Memory & Logic Solutions Inc.
IT Venture Tower Eastside 11F, 78, Karac-Dong, Songpa-Ku, Seoul, Rep.of Korea Zip Code : 138-160
Tel : +82-2-2142-1759~1766 Fax : +82-2-2142-1769 / Homepage : www.emlsi.com
The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
EM640FP16 Series
Low Power, 256Kx16 SRAM
FEATURES
•
•
•
•
•
•
Process Technology : 0.18
µ
m Full CMOS
Organization : 256K x 16 bit
Power Supply Voltage : 1.65V ~ 2.2V
Low Data Retention Voltage : 1.0V(Min.)
Three state outputs
Package Type : 48-FPBGA 6.0x7.0
GENERAL DESCRIPTION
The EM640FP16 families are fabricated by EMLSI’s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale
Package for user flexibility of system design. The fami-
lies also supports low data retention voltage for battery
back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product
Family
Operating
Temperature
Vcc
Range
Speed
Standby
(I
SB1
, Typ.)
1
µA
Operating
(I
CC1
.Max)
2 mA
PKG
Type
48-FPBGA
(6.0x7.0)
EM640FP16
Industrial (-40 ~ 85
o
C)
1.65~2.2V
70ns
1)
1. The parameter is measured with 30pF test load.
PIN DESCRIPTION
1
A
B
C
D
E
F
G
H
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
Pre-charge Circuit
LB
I/O
9
OE
UB
A
0
A
3
A
5
A
17
DNU
A
14
A
12
A
9
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
A
2
CS
1
I/O
2
I/O
4
I/O
5
I/O
6
WE
A
11
CS
2
I/O
1
I/O
3
V
CC
V
SS
I/O
7
I/O
8
DNU
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
V
CC
Row Select
V
SS
I/O
10
I/O
11
V
SS
V
CC
I/O
12
I/O
13
Memory Array
2048 x 2048
I/O1 ~ I/O8
I/O9 ~ I/O16
Data
Cont
I/O
15
I/O
14
I/O
16
DNU
DNU
A
8
Data
Cont
I/O Circuit
Column Select
48-FPBGA : Top view (ball down)
WE
OE
UB
LB
Control Logic
Name
CS
1
,CS
2
OE
WE
A
0
~A
17
Function
Chip select inputs
Output Enable input
Write Enable input
Address Inputs
Name
Vcc
Vss
UB
LB
DNU
Function
Power Supply
Ground
Upper Byte (I/O
9~16
)
Lower Byte (I/O
1~8
)
Do Not Use
CS
1
CS
2
I/O
1
~I/O
16
Data Inputs/outputs
2
EM640FP16 Series
Low Power, 256Kx16 SRAM
ABSOLUTE MAXIMUM RATINGS *
Parameter
Voltage on Any Pin Relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Operating Temperature
Symbol
V
IN
, V
OUT
V
CC
P
D
T
A
Minimum
-0.5 to 2.5V
-0.3 to 2.5V
1.0
-40 to 85
Unit
V
V
W
o
C
*
Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional oper-
ation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
FUNCTIONAL DESCRIPTION
CS
1
H
X
X
L
L
L
L
L
L
L
L
CS
2
X
L
X
H
H
H
H
H
H
H
H
OE
X
X
X
H
H
L
L
L
X
X
X
WE
X
X
X
H
H
H
H
H
L
L
L
LB
X
X
H
L
X
L
H
L
L
H
L
UB
X
X
H
X
L
H
L
L
H
L
L
I/O
1-8
High-Z
High-Z
High-Z
High-Z
High-Z
Data Out
High-Z
Data Out
Data In
High-Z
Data In
I/O
9-16
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Data Out
Data Out
High-Z
Data In
Data In
Mode
Deselected
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Stand by
Stand by
Stand by
Active
Active
Active
Active
Active
Active
Active
Active
Note: X means don’t care. (Must be low or high state)
3
EM640FP16 Series
Low Power, 256Kx16 SRAM
RECOMMENDED DC OPERATING CONDITIONS
1)
Parameter
Supply voltage
Ground
Input high voltage
Input low voltage
1.
2.
3.
4.
Symbol
V
CC
V
SS
V
IH
V
IL
Min
1.65
0
1.4
-0.3
3)
Typ
1.8
0
-
-
Max
2.2
0
V
CC
+ 0.3
2)
0.4
Unit
V
V
V
V
TA= -40 to 85
o
C, otherwise specified
Overshoot: V
CC
+1.0 V in case of pulse width < 20ns
Undershoot: -1.0 V in case of pulse width < 20ns
Overshoot and undershoot are sampled, not 100% tested
.
CAPACITANCE
1)
(f =1MHz, T
A
=25
o
C)
Item
Input capacitance
Input/Ouput capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Parameter
Input leakage current
Output leakage current
Operating power supply
Symbol
I
LI
I
LO
I
CC
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
V
OL
V
OH
Cycle time = Min, I
IO
=0mA, 100% duty,
CS
1
=V
IL
, CS
2
=V
IH
, LB=V
IL
or/and UB=V
IL
V
IN
=V
IL
or V
IH
I
OL
= 0.1mA
I
OH
= -0.1mA
CS
1
>V
CC
-0.2V, CS
2
>V
CC
-0.2V (CS
1
controlled)
or 0V<CS
2
<0.2V (CS
2
controlled),
Other inputs = 0 ~ V
CC
(Typ. condition : V
CC
=1.8V @ 25
o
C)
(Max. condition : V
CC
=2.2V @ 85
o
C)
V
IN
=V
SS
to V
CC
CS
1
=V
IH
, CS
2
=V
IL
or OE=V
IH
or WE=V
IL
or LB=UB=V
IH
V
IO
=V
SS
to V
CC
I
IO
=0mA, CS
1
=V
IL
, CS
2
=WE=V
IH
, V
IN
=V
IH
or V
IL
Cycle time=1
µ
s, 100% duty, I
LO
=0mA,
CS
1
<0.2V, LB<0.2V or/and UB<0.2V, CS
2
>V
CC
-0.2V
V
IN
<0.2V or V
IN
>V
CC
-0.2V
Test Conditions
Min
-1
-1
-
-
Typ
-
-
-
-
Max
1
1
2
2
Unit
uA
uA
mA
mA
-
-
1.4
-
-
-
15
0.2
-
mA
V
V
Standby Current (CMOS)
I
SB1
LL
LF
-
1
5
uA
4
EM640FP16 Series
Low Power, 256Kx16 SRAM
V
TM3)
R
12)
AC OPERATING CONDITIONS
Test Conditions (Test
Load and Test Input/Output Reference)
Input Pulse Level : 0.2 to VCC-0.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 0.9V
Output Load (See right) : CL = 100pF+ 1 TTL
CL
1)
= 30pF + 1 TTL
1. Including scope and Jig capacitance
R
2
=3150 ohm
2. R
1
=3070 ohm
,
3. V
TM
=1.8V
CL
1)
R
22)
READ CYCLE
(V
cc
=1.65 to 2.2V, Gnd = 0V, T
A
= -40
o
C to +85
o
C)
Parameter
Read Cycle Time
Address Access Time
Chip Select to output
Output Enable to valid output
UB, LB Acess time
Chip select to low-Z output
UB, LB enable to low-Z output
Output Enable to Low-Z output
Chip disable to high-Z output
UB, LB disable to high-Z output
Output disable to high-Z output
Output hold from address change
Symbol
t
RC
t
AA
t
co1,
t
co2
t
OE
t
BA
t
LZ1,
t
LZ2
t
BLZ
t
OLZ
t
HZ1,
t
HZ2
t
BHZ
t
OHZ
t
OH
70ns
Min
70
-
-
-
Max
-
70
70
35
70
10
10
5
0
0
0
10
-
-
-
25
25
25
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WRITE CYCLE
(V
cc
=1.65 to 2.2V, Gnd = 0V, T
A
= -40
o
C to +85
o
C)
Parameter
Write Cycle Time
Chip Select to end of write
Address Setup time
Address valid to end of write
UB, LB valid to end of write
Write pulse width
Write recovery time
Write to ouput high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
Symbol
t
WC
t
CW1,
t
CW2
t
As
t
AW
t
BW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
70ns
Min
70
60
0
60
60
55
0
0
30
0
5
-
-
Max
-
-
-
-
-
-
-
25
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
Test/Measurement
京公网安备 11010802033920号
EEWORLD
