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BB679-02V

Description
47.5 pF, SILICON, VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size406KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BB679-02V Overview

47.5 pF, SILICON, VARIABLE CAPACITANCE DIODE

BB679-02V Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeSC-79
package instructionSC-79, 2 PIN
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode Capacitance Tolerance8.42%
Minimum diode capacitance ratio12
Nominal diode capacitance47.5 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-F2
Humidity sensitivity level1
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BB679...
Silicon Variable Capacitance Diode
Designed for tuning wideband CATV-Tuners
High capacitance ratio
C
1V
/C
28V
(typ. 18.3)
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure

1
Forward current
Storage temperature
Operating temperature range





BB679-02V
2
Type
BB679-02V*
Package
SC79
Configuration
single
L
S
(nH)
Marking
0.6
K
* Preliminary
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage ( R
5k
)
V
R
V
RM
I
F
T
op
T
stg
Value
30
35
20
-55 ... 125
-55 ... 150
Unit
V
mA
°C
1
Oct-25-2002

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BB679-02V BB679
Description 47.5 pF, SILICON, VARIABLE CAPACITANCE DIODE 47.5 pF, SILICON, VARIABLE CAPACITANCE DIODE
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