BB679...
Silicon Variable Capacitance Diode
Designed for tuning wideband CATV-Tuners
High capacitance ratio
C
1V
/C
28V
(typ. 18.3)
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
1
Forward current
Storage temperature
Operating temperature range
BB679-02V
2
Type
BB679-02V*
Package
SC79
Configuration
single
L
S
(nH)
Marking
0.6
K
* Preliminary
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage ( R
5k
)
V
R
V
RM
I
F
T
op
T
stg
Value
30
35
20
-55 ... 125
-55 ... 150
Unit
V
mA
°C
1
Oct-25-2002
BB679...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 85 °C
AC Characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 2 V,
f
= 1 MHz
V
R
= 25 V,
f
= 1 MHz
V
R
= 28 V,
f
= 1 MHz
C
T
Unit
max.
nA
typ.
I
R
-
-
-
-
10
100
pF
43.5
33
2.55
2.4
47.5
36
2.75
2.6
18.3
13.1
-
0.6
51.5
38.8
2.95
2.8
20
14.5
2
0.8
%
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V,
f
= 1 MHz
C
T1
/
C
T28
16.5
C
T2
/
C
T25
C
T
/
C
T
-
Capacitance ratio
V
R
= 2 V,
V
R
= 25 V,
f
= 1 MHz
V
R
= 1 V,
V
R
= 28 V,
f
= 1 MHz
12
-
-
V
R
= 5 V,
f
= 470 MHz
1
For
details please refer to Application Note 047.
2
Oct-25-2002
Series resistance
Capacitance matching
1)
r
S
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