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BBY53-03W

Description
5.3 pF, 6 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size34KB,3 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BBY53-03W Overview

5.3 pF, 6 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

BBY53-03W Parametric

Parameter NameAttribute value
MakerSIEMENS
Parts packaging codeSOD
package instructionR-PDSO-G2
Contacts2
Manufacturer packaging codeSOD-323
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Minimum breakdown voltage6 V
ConfigurationSINGLE
Minimum diode capacitance ratio1.8
Nominal diode capacitance5.3 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum reverse current0.01 µA
Reverse test voltage4 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Varactor Diode ClassificationHYPERABRUPT
Base Number Matches1
BBY 53-03W
Silicon Tuning Diode
Preliminary data
• High Q hyperabrupt tuning diode
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• High ratio at low reverse voltage
Type
BBY 53-03W
Marking Ordering Code
white/5
Q62702-B0825
Pin Configuration
1=C
2=A
Package
SOD-323
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
Symbol
Values
6
20
- 55 ... + 150
- 55 ... + 150
Unit
V
mA
°C
V
R
I
F
T
op
T
stg
Semiconductor Group
1
Sep-11-1996

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Description 5.3 pF, 6 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE 5.3 pF, 6 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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