BBY 53-03W
Silicon Tuning Diode
Preliminary data
• High Q hyperabrupt tuning diode
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• High ratio at low reverse voltage
Type
BBY 53-03W
Marking Ordering Code
white/5
Q62702-B0825
Pin Configuration
1=C
2=A
Package
SOD-323
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
Symbol
Values
6
20
- 55 ... + 150
- 55 ... + 150
Unit
V
mA
°C
V
R
I
F
T
op
T
stg
Semiconductor Group
1
Sep-11-1996
BBY 53-03W
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
min.
DC characteristics
Reverse current
Values
typ.
max.
Unit
I
R
-
-
-
-
10
200
nA
V
R
= 4 V,
T
A
= 25 °C
V
R
= 4 V,
T
A
= 65 °C
AC characteristics
Diode capacitance
C
T
4.8
1.85
5.3
2.4
2.2
0.37
0.12
2
5.8
3.1
pF
V
R
= 1 V,
f
= 1 MHz
V
R
= 3 V,
f
= 1 MHz
Capacitance ratio
C
T1
/C
T3
1.8
2.6
-
Ω
-
-
pF
-
-
-
nH
-
V
R
= 1 V,
V
R
= 3 V,
f
= 1 MHz
Series resistance
r
s
C
C
L
s
V
R
= 1 V,
f
= 1 GHz
Case capacitance
f
= 1 MHz
Series inductance chip to ground
Semiconductor Group
2
Sep-11-1996
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